PD - 93982 REPETITIVE AVALANCHE AND dv/dt RATED IRFE024 HEXFET TRANSISTORS 60V, N-CHANNEL SURFACE MOUNT (LCC-18) Product Summary Part Number BVDSS RDS(on) ID IRFE024 60V 0.15 6.7A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement Features: for the TO-39 package, the LCC will give designers the Surface Mount extra flexibility they need to increase circuit board den- Small Footprint sity. International Rectifier has engineered the LCC pack- Alternative to TO-39 Package age to meet the specific needs of the power market by Hermetically Sealed increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The Dynamic dv/dt Rating lid of the package is grounded to the source to reduce Avalanche Energy Rating RF interference. Simple Drive Requirements Light Weight Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 6.7 D GS C A I V = 10V, T = 100C Continuous Drain Current 4.2 D GS C I Pulsed Drain Current 27 DM P T = 25C Max. Power Dissipation 14 W D C Linear Derating Factor 0.11 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 110 mJ AS I Avalanche Current -A AR E Repetitive Avalanche Energy -mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Pckg. Mounting Surface Temp. 300 (for 5 S) Weight 0.42(typical) g For footnotes refer to the last page www.irf.com 1 1/16/01IRFE024 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.068 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.15 V = 10V, I = 4.2A DS(on) GS D Resistance 0.17 V =10V, I =6.7A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I =250A GS(th) DS GS D g Forward Transconductance 4.3 S ( ) V > 15V, I =4.2A fs DS DS I Zero Gate Voltage Drain Current 25 V =48V, V =0V DSS DS GS A 250 V =48V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V =20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V =-20V GSS GS Q Total Gate Charge 26 V =10V, ID 6.7A g GS = Q Gate-to-Source Charge 5.0 nC V =30V gs DS Q Gate-to-Drain (Miller) Charge 13 gd t Turn-On Delay Time 14 V =30V, I =6.7A, d(on) DD D t Rise Time 70 R =7.5 r G ns t Turn-Off Delay Time 37 d(off) t Fall Time 45 f L L Total Inductance 6.1 nH S + D Measured from the center of drain pad to center of source pad C Input Capacitance 640 V = 0V, V =25V iss GS DS C Output Capacitance 340 pF f = 1.0MHz oss C Reverse Transfer Capacitance 69 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 6.7 S A I Pulse Source Current (Body Diode) 27 SM V Diode Forward Voltage 2.3 V T = 25C, I =6.7A, V = 0V j SD S GS t Reverse Recovery Time 200 nS Tj = 25C, I = 6.7A, di/dt 100A/ s rr F Q Reverse Recovery Charge 1.9 c V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 9.1 thJC C/W R Junction to PC Board 26 Soldered to a copper clad PC board thJ-PCB For footnotes refer to the last page 2 www.irf.com