IRFF420

PD-90429E IRFF420 JANTX2N6794 JANTXV2N6794 REPETITIVE AVALANCHE AND dv/dt RATED 500V, N-CHANNEL REF: MIL-PRF-19500/555 HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) I D IRFF420 500V 3.0 1.5A TO-39 Description Features Repetitive Avalanche Ratings The HEXFET technology is the key to International Dynamic dv/dt Rating Rectifiers HiRel advanced line of power MOSFET transistors. Hermetically Sealed The efficient geometry and unique processing of this latest Simple Drive Requirements State of the Art design achieves: very low on state ESD Rating: Class 1B per MIL-STD-750, resistance combined with high trans conductance. Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Value Parameter Units I V = 10V, T = 25C Continuous Drain Current 1.5 D1 GS C A I V = 10V, T = 100C Continuous Drain Current 1.0 D2 GS C I T = 25C Pulsed Drain Current 6.0 DM C W P T = 25C Maximum Power Dissipation 20 D C W/C Linear Derating Factor 0.16 V V Gate-to-Source Voltage 20 GS E Single Pulse Avalanche Energy 0.242 mJ AS A I Avalanche Current 2.2 AR E Repetitive Avalanche Energy 2.0 mJ AR V/ns dv/dt Peak Diode Recovery dv/dt 3.5 T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) g Weight 0.98 (Typical) For Footnotes, refer to the page 2. 1 2018-12-05 International Rectifier HiRel Products, Inc. IRFF420 JANTX2N6794/JANTXV2N6794 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 1.0mA DSS GS D BV /T Breakdown Voltage Temp. Coefficient 0.43 V/C Reference to 25C, I = 1.0mA DSS J D 3.0 V = 10V, I = 1.0A GS D2 R Static Drain-to-Source On-Resistance DS(on) 3.1 V = 10V, I = 1.5A GS D1 V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D Gfs Forward Transconductance 1.0 S V = 15V, I = 1.0A DS D2 I 25 V = 400 V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 400V,V = 0V,T =125C DS GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 7.3 25 I = 1.5A G D1 Q Gate-to-Source Charge 0.1 6.0 nC V = 250V GS DS Q Gate-to-Drain (Miller) Charge 3.7 18 V = 10V GD GS t Turn-On Delay Time 40 V = 225V d(on) DD tr Rise Time 30 I = 1.5A D1 ns t Turn-Off Delay Time 60 R = 7.5 d(off) G V = 10V t Fall Time 30 f GS Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) with Source wire Ls +L Total Inductance 7.0 nH D internally bonded from Source pin to Drain pin C Input Capacitance 350 V = 0V iss GS C Output Capacitance 80 pF V = 25V oss DS C Reverse Transfer Capacitance 35 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 1.5 S A I Pulsed Source Current (Body Diode) 6.0 SM V Diode Forward Voltage 1.2 V T = 25C,I = 1.5A, V = 0V SD J S GS t Reverse Recovery Time 900 ns T = 25C, I = 1.5A, V 50V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 5.9 C rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Thermal Resistance Symbol Parameter Min. Typ. Max. Units Junction-to-Case 6.25 R JC C/W R Junction-to-Ambient (Typical Socket Mount) 175 JA Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 50V, starting T = 25C, L = 100H, Peak I = 2.2A DD J L I 1.5A, di/dt 50A/s, V 500V, T 150C, Suggested R = 7.5 SD DD J G Pulse width 300 s Duty Cycle 2% 2 2018-12-05 International Rectifier HiRel Products, Inc.