IRFH4201PbF HEXFET Power MOSFET V 25 V DSS R max DS(on) 0.95 ( V = 10V) GS m ( V = 4.5V) 1.25 GS Qg 46.0 nC (typical) I D 100 A PQFN 5X6 mm ( T = 25C) C (Bottom) Applications Synchronous Rectifier MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and Hot Swap Battery Operated DC Motor Inverters Features Benefits Low R (<0.95 m ) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<0.8C/W) Enable better thermal dissipation Low Profile (<0.9 mm) Increased Power Density results in Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFH4201PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4201TRPbF Absolute Maximum Ratings Parameter Max. Units Gate-to-Source Voltage 20 V V GS I T = 25C Continuous Drain Current, V 10V 49 A D A GS I T = 25C Continuous Drain Current, V 10V 326 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 206 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V 100 D C(Bottom) GS (Source Bonding Technology Limited) I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 3.5 W D A P T = 25C Power Dissipation 156 D C(Bottom) Linear Derating Factor 0.028 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 9 1 2017-01-24 IRFH4201PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 20 mV/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 0.70 0.95 V = 10V, I = 50A DS(on) GS D m 0.97 1.25 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 150A GS(th) DS GS D Gate Threshold Voltage Coefficient -5.9 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 175 S V = 13V, I = 50A DS D Q Total Gate Charge 94.0 nC V = 10V, V = 13V, I = 50A g GS DS D Q Total Gate Charge 46.0 69.0 g V = 13V Q Pre-Vth Gate-to-Source Charge 11.0 gs1 DS Q Post-Vth Gate-to-Source Charge 6.4 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 16.0 I = 50A D gd Q Gate Charge Overdrive 12.6 godr Q Switch Charge (Q + Q) 22.4 sw gs2 gd Q Output Charge 46.0 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.9 2.7 G t Turn-On Delay Time 20 V = 13V, V = 4.5V d(on) DD GS t Rise Time 43 ns I = 50A D r t Turn-Off Delay Time 24 d(off) R =1.8 G t Fall Time 19 f C Input Capacitance 6100 V = 0V iss GS C Output Capacitance 1700 pF V = 13V oss DS C Reverse Transfer Capacitance 450 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. E Single Pulse Avalanche Energy 478 AS I Avalanche Current 50 AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 31 47 ns T = 25C, I = 50A, V = 13V rr J F DD Q Reverse Recovery Charge 84 126 nC di/dt = 400A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 0.8 R (Bottom) JC C/W R (Top) Junction-to-Case 18 JC R Junction-to-Ambient 36 JA R (<10s) Junction-to-Ambient 22 JA 2 2017-01-24