FastIRFET IRFH4210DPbF HEXFET Power MOSFET V 25 V DSS R max DS(on) 1.10 ( V = 10V) GS m ( V = 4.5V) 1.35 GS Qg 37.0 nC (typical) I D 100 A PQFN 5X6 mm ( T = 25C) C (Bottom) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low R (<1.10 m) Lower Conduction Losses DS(ON) Schottky Intrinsic Diode with Low Forward Voltage Lower Switching Losses Low Thermal Resistance to PCB (<1.0C/W) Enable better thermal dissipation Low Profile (<0.9 mm) Increased Power Density results in Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH4210DPbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4210DTRPbF Absolute Maximum Ratings Parameter Max. Units Gate-to-Source Voltage 20 V V GS I T = 25C Continuous Drain Current, V 10V 44 D A GS I T = 25C Continuous Drain Current, V 10V 266 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 168 D C(Bottom) GS A I T = 25C Continuous Drain Current, V 10V 100 D C(Bottom) GS (Source Bonding Technology Limited) I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 3.5 D A W P T = 25C Power Dissipation 125 D C(Bottom) Linear Derating Factor 0.028 W/C Operating Junction and -55 to + 150 T J C T Storage Temperature Range STG Notes through are on page 9 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 IRFH4210DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 1mA DSS GS D Breakdown Voltage Temp. Coefficient 19 mV/C Reference to 25C, I = 10mA BV /T D DSS J R Static Drain-to-Source On-Resistance 0.85 1.10 V = 10V, I = 50A m DS(on) GS D 1.10 1.35 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 100A GS(th) DS GS D Gate Threshold Voltage Coefficient -10 mV/C V GS(th) I Drain-to-Source Leakage Current 250 A V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 392 S V = 13V, I = 50A DS D Q Total Gate Charge 77.0 nC V = 10V, V = 13V, I = 50A g GS DS D Q Total Gate Charge 37.0 55.5 g V = 13V Q Pre-Vth Gate-to-Source Charge 7.6 gs1 DS Q Post-Vth Gate-to-Source Charge 6.4 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 13.2 I = 50A D gd Q Gate Charge Overdrive 9.8 godr Q Switch Charge (Q + Q) 19.6 sw gs2 gd Q Output Charge 37 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.3 G t Turn-On Delay Time 19 V = 13V, V = 4.5V d(on) DD GS t Rise Time 45 ns I = 50A D r t Turn-Off Delay Time 24 d(off) R =1.8 G t Fall Time 16 f C Input Capacitance 4812 V = 0V iss GS C Output Capacitance 1459 pF V = 13V oss DS C Reverse Transfer Capacitance 355 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. E Single Pulse Avalanche Energy 247 AS I Avalanche Current 50 AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A I Pulsed Source Current integral reverse SM 400 (Body Diode) p-n junction diode. V Diode Forward Voltage 0.75 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 27 41 ns T = 25C, I = 50A, V = 13V rr J F DD Q Reverse Recovery Charge 59 89 nC di/dt = 300A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 1.0 R (Bottom) JC C/W R (Top) Junction-to-Case 22 JC R Junction-to-Ambient 36 JA R (<10s) Junction-to-Ambient 21 JA 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 16, 2015