FastIRFET IRFH4226PbF HEXFET Power MOSFET V 25 V DSS R max DS(on) 2.4 ( V = 10V) GS m ( V = 4.5V) 3.3 GS Qg 16 nC (typical) I D 70 A PQFN 5X6 mm ( T = 25C) C (Bottom) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 16 nC) Low Switching Losses Low R (<2.4 m) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<2.7 C/W) Enable better Thermal Dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFH4226PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4226TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 30 D A GS I T = 25C Continuous Drain Current, V 10V 110 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 69 D C(Bottom) GS A I T = 25C Continuous Drain Current, V 10V 70 D C GS (Source Bonding Technology Limited) I Pulsed Drain Current 460 DM P T = 25C Power Dissipation 3.4 D A W P T = 25C Power Dissipation 46 D C(Bottom) Linear Derating Factor 0.027 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 11, 2015 IRFH4226PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1mA BV /T D DSS J R Static Drain-to-Source On-Resistance 1.7 2.4 V = 10V, I = 30A DS(on) GS D m 2.6 3.3 V = 4.5V, I = 30A GS D V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 50A GS(th) DS GS D Gate Threshold Voltage Coefficient -5.7 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 136 S V = 10V, I = 30A DS D Q Total Gate Charge 32 nC V = 10V, V = 13V, I = 30A g GS DS D Q Total Gate Charge 16 24 g V = 13V Q Pre-Vth Gate-to-Source Charge 3.6 gs1 DS Q Post-Vth Gate-to-Source Charge 2.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 5.8 I = 30A D gd Q Gate Charge Overdrive 4.6 godr Q Switch Charge (Q + Q) 7.8 sw gs2 gd Q Output Charge 15 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.1 G t Turn-On Delay Time 11 V = 13V, V = 4.5V d(on) DD GS t Rise Time 35 ns I = 30A D r t Turn-Off Delay Time 14 R =1.8 d(off) G t Fall Time 8.1 f C Input Capacitance 2000 V = 0V iss GS pF V = 13V C Output Capacitance 570 oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss Avalanche Characteristics Parameter Max. Units. E Single Pulse Avalanche Energy 131 mJ AS I Avalanche Current 30 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 70 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 460 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 30A, V = 13V rr J F DD Q Reverse Recovery Charge 28 42 nC di/dt = 450A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 2.7 R (Bottom) JC C/W R (Top) Junction-to-Case 27 JC R Junction-to-Ambient 37 JA R (<10s) Junction-to-Ambient 23 JA 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 11, 2015