HEXFET Power MOSFET V 60 V DS R DS(on) max 4.1 m ( V = 10V) GS Q 69 nC g (typical) R 1.2 G (typical) I D 100 A ( T = 25C) mb PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low R ( 4.1m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 0.8C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable part number Form Quantity IRFH5006PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5006TRPBF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 21 D A GS I T = 70C Continuous Drain Current, V 10V 17 D A GS I T = 25C Continuous Drain Current, V 10V 100 A D mb GS I T = 100C Continuous Drain Current, V 10V 100 D mb GS Pulsed Drain Current I 400 DM P T = 25C Power Dissipation 3.6 D A W Power Dissipation P T = 25C 156 D mb Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 IRFH5006PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 3.5 4.1 V = 10V, I = 50A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 150 A DS GS D V Gate Threshold Voltage Coefficient -8.0 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A = 60V, V = 0V, T = 125C 250 V DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 92 S V = 25V, I = 50A DS D Q Total Gate Charge 69 104 g Q Pre-Vth Gate-to-Source Charge 12 V = 30V gs1 DS Q Post-Vth Gate-to-Source Charge 6.8 V = 10V gs2 GS nC Q Gate-to-Drain Charge 20 I = 50A gd D Q Gate Charge Overdrive 30.2 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 26.8 sw gs2 gd Q Output Charge 23 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 9.6 V = 30V, V = 10V d(on) DD GS t Rise Time 13 I = 50A r D ns t Turn-Off Delay Time 30 R =1.8 d(off) G t Fall Time 12 See Fig.15 f C Input Capacitance 4175 V = 0V iss GS C Output Capacitance 550 = 30V pF V oss DS C Reverse Transfer Capacitance 255 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 285 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C, I = 50A, V = 30V rr J F DD Q di/dt = 500A/s Reverse Recovery Charge 130 195 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 JC-mb Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA R (<10s) Junction-to-Ambient 22 JA