HEXFET Power MOSFET V 150 V DS R DS(on) max 31 m ( V = 10V) GS Q 36 nC g (typical) R 1.7 G (typical) I D PQFN 5X6 mm 44 A ( T = 25C) mb Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 m) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IRFH5015PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5015TRPBF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 150 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 10 D A GS I T = 70C Continuous Drain Current, V 10V 8.2 D A GS A I T = 25C Continuous Drain Current, V 10V 44 D mb GS I T = 100C Continuous Drain Current, V 10V 28 D mb GS Pulsed Drain Current I 220 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 156 D mb Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 IRFH5015PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 25.5 31 V = 10V, I = 34A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V GS(th) V = V , I = 150 A DS GS D V Gate Threshold Voltage Coefficient -12 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 150V, V = 0V DSS DS GS A 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 38 S V = 50V, I = 34A DS D Q Total Gate Charge 36 54 g Q Pre-Vth Gate-to-Source Charge 13 V = 75V gs1 DS Q Post-Vth Gate-to-Source Charge 4.6 V = 10V gs2 GS nC Q Gate-to-Drain Charge 11 I = 34A gd D Q Gate Charge Overdrive 7.4 godr Q Switch Charge (Q + Q ) 15.6 sw gs2 gd Q Output Charge 14 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.7 G t Turn-On Delay Time 9.4 V = 75V, V = 10V d(on) DD GS t Rise Time 9.7 I = 34A r D ns t Turn-Off Delay Time 14 R =1.3 d(off) G t Fall Time 3.4 f C Input Capacitance 2300 V = 0V iss GS C Output Capacitance 205 pF V = 50V oss DS C Reverse Transfer Capacitance 47 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 230 mJ AS Avalanche Current I 34 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 56 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 220 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 34A, V = 0V SD J S GS t Reverse Recovery Time 52 78 ns T = 25C, I = 34A, V = 75V rr J F DD Q Reverse Recovery Charge 550 825 nC di/dt = 500A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 JC-mb Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA