HEXFET Power MOSFET V 40 V DS R DS(on) max 4.3 m ( V = 10V) GS Q 43 g (typical) nC R 1.7 G (typical) I D PQFN 5X6 mm 100 A ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 4.3 m) Lower Conduction Losses Low Thermal Resistance to PCB (< 1.2C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH5204TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5204TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 22 D A GS I T = 70C Continuous Drain Current, V 10V 18 D A GS I T = 25C Continuous Drain Current, V 10V 100 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 100 D C(Bottom) GS Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 105 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.05 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 3.6 4.3 V = 10V, I = 50A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 100 A DS GS D V Gate Threshold Voltage Coefficient -9.3 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 40V, V = 0V DSS DS GS A 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 96 S V = 15V, I = 50A DS D Q Total Gate Charge 43 65 g Q Pre-Vth Gate-to-Source Charge 9.1 V = 20V gs1 DS Q Post-Vth Gate-to-Source Charge 4.0 V = 10V gs2 GS nC Q Gate-to-Drain Charge 14 I = 50A gd D Q Gate Charge Overdrive 16 godr Q Switch Charge (Q + Q ) 18 sw gs2 gd Q Output Charge 18 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.7 G t Turn-On Delay Time 8.4 V = 20V, V = 10V d(on) DD GS t Rise Time 14 I = 50A r D ns t Turn-Off Delay Time 18 R =1.8 d(off) G t Fall Time 8.3 f C Input Capacitance 2460 V = 0V iss GS C Output Capacitance 515 pF V = 25V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 102 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 30 45 ns T = 25C, I = 50A, V = 20V rr J F DD Q di/dt = 500A/s Reverse Recovery Charge 128 192 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.2 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA