HEXFET Power MOSFET V 60 V DS R DS(on) max 6.7 m ( V = 10V) GS Q 40 g (typical) nC R 1.7 G (typical) I D 89 A PQFN 5X6 mm ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low R ( 7.0m at Vgs=10V) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 1.2C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH5206TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5206TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 16 D A GS I T = 70C Continuous Drain Current, V 10V 13 D A GS I T = 25C Continuous Drain Current, V 10V 89 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 56 D C(Bottom) GS Pulsed Drain Current I 350 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 100 D C(Bottom) Linear Derating Factor (Bottom) 0.83 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 5.6 6.7 V = 10V, I = 50A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 100 A DS GS D V Gate Threshold Voltage Coefficient -9.7 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 73 S V = 25V, I = 50A DS D Q Total Gate Charge 40 60 g Q Pre-Vth Gate-to-Source Charge 6.2 V = 30V gs1 DS Q Post-Vth Gate-to-Source Charge 3.4 V = 10V gs2 GS nC Q Gate-to-Drain Charge 12 I = 50A gd D Q Gate Charge Overdrive 18.4 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 15.4 sw gs2 gd Q Output Charge 14 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.7 G t Turn-On Delay Time 6.4 V = 30V, V = 10V d(on) DD GS t Rise Time 11 I = 50A r D ns t Turn-Off Delay Time 22 R =1.8 d(off) G t Fall Time 8.2 See Fig.15 f C Input Capacitance 2490 V = 0V iss GS C Output Capacitance 360 pF V = 25V oss DS C Reverse Transfer Capacitance 160 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 87 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 89 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 350 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 26 39 ns T = 25C, I = 50A, V = 30V rr J F DD Q di/dt = 500A/s Reverse Recovery Charge 110 165 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.2 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA