IRFH5210PbF HEXFET Power MOSFET V 100 V DS R DS(on) max 14.9 m ( V = 10V) GS Q 40 g (typical) nC R 1.7 G (typical) I D 55 A PQFN 5X6 mm ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low R ( 14.9m at Vgs = 10V) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 1.2C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH5210TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5210TR2PBF PQFN 5mm x 6mm Tape and Reel 1000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 10 D A GS I T = 70C Continuous Drain Current, V 10V 8.1 D A GS I T = 25C Continuous Drain Current, V 10V 55 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 35 D C(Bottom) GS Pulsed Drain Current I 220 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 104 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 www.irf.com 1 06/24/11 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 12.6 14.9 m V = 10V, I = 33A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 100 A DS GS D V Gate Threshold Voltage Coefficient -9.3 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 66 S V = 50V, I = 33A DS D Q Total Gate Charge 40 60 g Q Pre-Vth Gate-to-Source Charge 7.4 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 3.2 V = 10V gs2 GS nC Q Gate-to-Drain Charge 11 I = 33A gd D Q Gate Charge Overdrive 18.4 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 14.2 sw gs2 gd Q Output Charge 11 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.7 G t Turn-On Delay Time 7.2 V = 50V, V = 10V d(on) DD GS t Rise Time 9.7 I = 33A r D ns t Turn-Off Delay Time 21 R =1.65 d(off) G t Fall Time 6.5 See Fig.15 f C Input Capacitance 2570 V = 0V iss GS C Output Capacitance 260 pF V = 25V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 86 mJ AS Avalanche Current I 33 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 55 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 220 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 33A, V = 0V SD J S GS t Reverse Recovery Time 29 44 ns T = 25C, I = 33A, V = 50V rr J F DD Q di/dt = 500A/s Reverse Recovery Charge 165 250 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.2 JC Junction-to-Case R (Top) 15 JC C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA 2 www.irf.com