IRFH5215PbF HEXFET Power MOSFET V 150 V DS R DS(on) max 58 m ( V = 10V) GS Q 21 g (typical) nC R G (typical) 2.3 I D PQFN 5X6 mm 27 A ( T = 25C) c(Bottom) Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 58 m) Lower Conduction Losses Low Thermal Resistance to PCB (<1.2C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH5215TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5215TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 150 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 5.0 D A GS I T = 70C Continuous Drain Current, V 10V 4.0 D A GS I T = 25C Continuous Drain Current, V 10V 27 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 17 D C(Bottom) GS Pulsed Drain Current I 108 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 104 D C(Bottom) Linear Derating Factor W/C 0.029 T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 www.irf.com 1 09/26/11 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.19 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 45.5 58 V = 10V, I = 16A m DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V GS(th) V = V , I = 100 A DS GS D V Gate Threshold Voltage Coefficient -12 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 150V, V = 0V DSS DS GS A 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 21 S V = 50V, I = 16A DS D Q Total Gate Charge 21 32 g Q Pre-Vth Gate-to-Source Charge 7.2 V = 75V gs1 DS Q Post-Vth Gate-to-Source Charge 2.2 V = 10V gs2 GS nC Q Gate-to-Drain Charge 6.7 I = 16A gd D Q Gate Charge Overdrive 4.9 godr Q Switch Charge (Q + Q ) 8.9 sw gs2 gd Q Output Charge 10 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.3 G t Turn-On Delay Time 6.7 V = 75V, V = 10V d(on) DD GS t Rise Time 6.3 I = 16A r D ns t Turn-Off Delay Time 11 R =1.3 d(off) G t Fall Time 2.9 f C Input Capacitance 1350 V = 0V iss GS C Output Capacitance 120 pF V = 50V oss DS C Reverse Transfer Capacitance 30 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 96 mJ AS Avalanche Current I 16 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 27 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 108 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 16A, V = 0V SD J S GS t Reverse Recovery Time 40 60 ns T = 25C, I = 16A, V = 75V rr J F DD di/dt = 500A/s Q Reverse Recovery Charge 370 555 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.2 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA 2 www.irf.com