HEXFET Power MOSFET V 25 V DS R DS(on) max 6.0 m ( V = 10V) GS Q 7.0 nC g (typical) R 0.6 G (typical) I D PQFN 5X6 mm 51 A ( T = 25C) c(Bottom) Applications Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits Features Low Charge (typical 7nC) Lower Switching Losses Low Rg (typical 0.6) Lower Switching Losses Low Thermal Resistance to PCB (<4.9C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH5255TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5255TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 25 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 15 A GS D I T = 70C Continuous Drain Current, V 10V 12 GS D A Continuous Drain Current, V 10V I T = 25C 51 A C(Bottom) GS D I T = 100C Continuous Drain Current, V 10V 33 GS D C(Bottom) Pulsed Drain Current I 60 DM Power Dissipation P T = 25C 3.6 A D W Power Dissipation P T = 25C 26 C(Bottom) D Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 5.0 6.0 V = 10V, I = 15A DS(on) GS D m 8.8 10.9 V = 4.5V, I = 15A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V GS(th) V = V , I = 25A DS GS D V Gate Threshold Voltage Coefficient -6.3 mV/C GS(th) I Drain-to-Source Leakage Current 5 V = 20V, V = 0V DSS DS GS A 150 V = 20V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 48 S V = 13V, I = 15A DS D Q Total Gate Charge 14.5 nC V = 10V, V = 13V, I = 15A g GS DS D Q Total Gate Charge 7.0 11 g Q Pre-Vth Gate-to-Source Charge 1.6 V = 13V gs1 DS Q Post-Vth Gate-to-Source Charge 1.2 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 2.7 I = 15A gd D Q Gate Charge Overdrive 1.5 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 3.8 sw gs2 gd Q Output Charge 6.0 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.6 G t Turn-On Delay Time 7.9 V = 13V, V = 4.5V d(on) DD GS t Rise Time 10.7 I = 15A r D ns t Turn-Off Delay Time 6.5 R =1.0 d(off) G t Fall Time 3.8 See Fig.15 f C Input Capacitance 988 V = 0V iss GS C pF oss Output Capacitance 289 V = 13V DS C rss Reverse Transfer Capacitance 127 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 53 mJ AS Avalanche Current I 15 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 51 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM 60 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 15A, V = 0V SD J S GS t T = 25C, I = 15A, V = 13V Reverse Recovery Time 11 17 ns rr J F DD Q di/dt = 300A/s Reverse Recovery Charge 7.8 12 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 4.9 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA