HEXFET Power MOSFET V 30 V DS R DS(on) max 8.1 m ( V = 10V) GS Q 7.8 nC g (typical) R 1.4 G (typical) I D 44 A ( T = 25C) c(Bottom) PQFN 5X6 mm Applications Control MOSFET for buck converters Features and Benefits Features Benefits Low charge (typical 7.8nC) Lower switching losses Low thermal resistance to PCB (< 4.9C/W) Increased power density 100% Rg tested Increased reliability Low profile (< 0.9 mm) results in Increased power density Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL1, Industrial qualification Increased reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH5306TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5306TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 15 D A GS I T = 70C Continuous Drain Current, V 10V 13 D A GS A I T = 25C Continuous Drain Current, V 10V 44 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 28 D C(Bottom) GS I Pulsed Drain Current 60 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 26 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 6.9 8.1 V = 10V, I = 15A DS(on) GS D m 11 13.3 V = 4.5V, I = 15A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25 A DS GS D V Gate Threshold Voltage Coefficient -6.4 mV/C GS(th) I Drain-to-Source Leakage Current 5.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 35 S V = 15V, I = 15A DS D Total Gate Charge 7.8 12 Q g Q Pre-Vth Gate-to-Source Charge 1.8 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.1 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 3.0 I = 15A gd D Q Gate Charge Overdrive 1.9 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 4.1 sw gs2 gd Q Output Charge 4.9 nC V = 16V, V = 0V oss DS GS Gate Resistance 1.4 R G t Turn-On Delay Time 9.0 V = 15V, V = 4.5V d(on) DD GS t Rise Time 26 I = 15A r D ns t Turn-Off Delay Time 9.1 R =1.8 d(off) G t Fall Time 6.1 See Fig.15 f C Input Capacitance 1125 V = 0V iss GS pF C Output Capacitance 230 V = 15V oss DS Reverse Transfer Capacitance 102 C = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 46 mJ AS I Avalanche Current 15 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 44 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM 60 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 15A, V = 0V SD J S GS t Reverse Recovery Time 17 26 ns T = 25C, I = 15A, V = 15V rr J F DD Q Reverse Recovery Charge 18 27 nC di/dt = 200A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 4.9 JC Junction-to-Case R (Top) 24 C/W JC R Junction-to-Ambient 35 JA R (<10s) Junction-to-Ambient 22 JA