HEXFET Power MOSFET V 100 V DS V 20 V gs max R DS(on) max 13.5 m ( V = 10V) GS 58 nC Q G (typical) R 0.6 G (typical) PQFN 5X6 mm I D 50 A ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 13.5mW) Lower Conduction Losses Low Thermal Resistance to PCB (< 1.2C/W) Enables better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH7110TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7110TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 11 A GS D Continuous Drain Current, V 10V I T = 70C 8.6 D A GS I T = 25C Continuous Drain Current, V 10V 58 GS D C(Bottom) A I T = 100C Continuous Drain Current, V 10V 37 GS D C(Bottom) I T = 25C Continuous Drain Current, V 10V (Package Limited) 50 GS D C Pulsed Drain Current I 240 DM Power Dissipation P T = 25C 3.6 A D W Power Dissipation P T = 25C 104 C(Bottom) D Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 100 V GS D DSS V /T Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 10.6 13.5 m V = 10V, I = 35A GS D DS(on) V Gate Threshold Voltage 2.0 3.0 4.0 V GS(th) V = V , I = 100A DS GS D V Gate Threshold Voltage Coefficient -9.0 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DS GS DSS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS V = 25V, I = 35A gfs Forward Transconductance 74 S DS D Q Total Gate Charge 58 87 g Q Pre-Vth Gate-to-Source Charge 11 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 3.6 V = 10V gs2 GS nC Q Gate-to-Drain Charge 16 I = 35A gd D Q Gate Charge Overdrive 27.4 godr Q Switch Charge (Q + Q ) 19.6 sw gs2 gd V = 16V, V = 0V Q Output Charge 17 nC oss DS GS R Gate Resistance 0.6 G t Turn-On Delay Time 11 V = 50V, V = 10V DD GS d(on) t Rise Time 23 I = 35A r D ns R =1.8 t Turn-Off Delay Time 22 d(off) G t Fall Time 18 f C Input Capacitance 3240 V = 0V iss GS pF C Output Capacitance 300 V = 25V oss DS 140 C Reverse Transfer Capacitance = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 110 mJ AS Avalanche Current I 35 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 50 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 240 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 35A, V = 0V SD J S GS t Reverse Recovery Time 27 41 ns T = 25C, I = 35A, V = 50V rr DD J F Q Reverse Recovery Charge 140 210 nC di/dt = 500A/ s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R (Bottom) Junction-to-Case 1.2 JC R (Top) Junction-to-Case 32 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA