FastIRFET IRFH7188PbF HEXFET Power MOSFET V 100 V DSS R max DS(on) 6.0 m ( V = 10V) GS Q 33 nC g (typical) R 0.92 g (typical) I D 105 A ( T = 25C) C (Bottom) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features Benefits Low R (< 6.0m) Lower Conduction Losses DS(ON) Low Thermal Resistance to PCB (<0.95C/W) Increased Power Density 100% Rg Tested Increased Reliability Low Profile (<1.05 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1 Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH7188PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH7188TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 18 D A GS I T = 25C Continuous Drain Current, V 10V 105 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 66 D C(Bottom) GS I Pulsed Drain Current 210 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 132 D C(Bottom) Linear Derating Factor 0.03 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 9 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback July 20, 2015 IRFH7188PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 61 mV/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 5.0 6.0 m V = 10V, I = 50A DS(on) GS D V Gate Threshold Voltage 2.0 3.6 V V = V , I = 150A GS(th) DS GS D Gate Threshold Voltage Coefficient -5.6 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 80V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS S gfs Forward Transconductance 109 V = 25V, I = 50A DS D Q Total Gate Charge 33 50 g Q Pre-Vth Gate-to-Source Charge 6.5 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 2.1 nC V = 10V GS gs2 Q Gate-to-Drain Charge 11 I = 50A gd D Q Gate Charge Overdrive 13.4 godr Q Switch Charge (Q + Q) 13.1 sw gs2 gd Q Output Charge 101 nC V = 50V, V = 0V oss DS GS R Gate Resistance 0.92 G t Turn-On Delay Time 6.7 V = 50V, V = 10V d(on) DD GS t Rise Time 14 ns I = 50A D r t Turn-Off Delay Time 12 R = 1.0 d(off) G t Fall Time 4.5 f C Input Capacitance 2116 V = 0V iss GS C Output Capacitance 1074 pF V = 50V oss DS = 1.0MHz C Reverse Transfer Capacitance 18 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 105 A MOSFET symbol S D (Body Diode) showing the G I Pulsed Source Current 210 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.3 V T = 25C, I = 50A, V =0V SD J S GS t Reverse Recovery Time 50 75 ns T = 25C, I = 50A, V = 50V rr J F DD Q Reverse Recovery Charge 75 113 nC di/dt = 100A/s rr Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 493 mJ AS (Thermally limited) I Avalanche Current 18 A AR Thermal Resistance Parameter Typ. Max. Units R (Bottom) Junction-to-Case 0.95 JC C/W R (Top) Junction-to-Case 21 JC R Junction-to-Ambient 33 JA Junction-to-Ambient 22 R (<10s) JA 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback July 20, 2015