FastIRFET IRFH7191PbF HEXFET Power MOSFET V 100 V DSS R max DS(on) 8.0 m ( V = 10V) GS Q 26 nC g (typical) R 1.0 g (typical) I D 80 A ( T = 25C) C (Bottom) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features Benefits Low R (< 8.0m) Lower Conduction Losses DS(ON) Low Thermal Resistance to PCB (<1.2C/W) Increased Power Density 100% Rg Tested Increased Reliability Low Profile (<1.05 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1 Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH7191PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH7191TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 15 D A GS I T = 25C Continuous Drain Current, V 10V 80 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 51 D C(Bottom) GS I Pulsed Drain Current 234 DM P T = 25C Power Dissipation 3.6 W D A P T = 25C Power Dissipation 104 D C(Bottom) Linear Derating Factor 0.03 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 9 1 2017-01-24 IRFH7191PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 103 mV/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 6.2 8.0 m V = 10V, I = 48A DS(on) GS D V Gate Threshold Voltage 2.0 3.6 V V = V , I = 100A GS(th) DS GS D Gate Threshold Voltage Coefficient -4.9 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 80V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS S gfs Forward Transconductance 112 V = 25V, I = 48A DS D Q Total Gate Charge 26 39 g Q Pre-Vth Gate-to-Source Charge 4.7 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 1.9 nC V = 10V GS gs2 Q Gate-to-Drain Charge 8.3 I = 48A gd D Q Gate Charge Overdrive 12 godr Q Switch Charge (Q + Q) 10 sw gs2 gd Q Output Charge 80 nC V = 50V, V = 0V oss DS GS R Gate Resistance 1.0 G t Turn-On Delay Time 4.5 V = 50V, V = 10V d(on) DD GS t Rise Time 6.1 ns I = 48A D r t Turn-Off Delay Time 10.6 R = 1.0 d(off) G t Fall Time 3.6 f C Input Capacitance 1685 V = 0V iss GS C Output Capacitance 836 pF V = 50V oss DS = 1.0MHz C Reverse Transfer Capacitance 16 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 80 A MOSFET symbol S D (Body Diode) showing the G I Pulsed Source Current 234 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.3 V T = 25C, I = 48A, V =0V SD J S GS t Reverse Recovery Time 63 95 ns T = 25C, I = 48A, V = 50V rr J F DD Q Reverse Recovery Charge 126 190 nC di/dt = 100A/s rr Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 269 mJ AS I Avalanche Current 48 A AR Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 1.2 R (Bottom) JC Junction-to-Case 22 C/W R (Top) JC Junction-to-Ambient 35 R JA Junction-to-Ambient 20 R (<10s) JA 2 2017-01-24