Fast IRFET IRFH7194PbF HEXFET Power MOSFET V 100 V DSS R max DS(on) 16.4 m ( V = 10V) GS Q 13 nC g (typical) R 2.1 g (typical) I D 35 A ( T = 25C) C (Bottom) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low R (< 16.4m) Lower Conduction Losses DS(ON) Low Thermal Resistance to PCB (<3.2C/W) Increased Power Density 100% Rg Tested Increased Reliability Low Profile (<1.05 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques E as ier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1 Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH7194PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH7194TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 11 D A GS I T = 25C Continuous Drain Current, V 10V 35 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 22 D C(Bottom) GS I Pulsed Drain Current 140 DM P T = 25C Power Dissipation 3.6 W D A P T = 25C Power Dissipation 39 D C(Bottom) Linear Derating Factor 0.03 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 8 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback September 10, 2014 IRFH7194PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 78 mV/C Reference to 25C, I = 1mA BV /T D DSS J R Static Drain-to-Source On-Resistance 13.7 16.4 V = 10V, I = 21A m DS(on) GS D V Gate Threshold Voltage 2.0 3.6 V V = V , I = 50A GS(th) DS GS D Gate Threshold Voltage Coefficient -5.2 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 80V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS S gfs Forward Transconductance 45 V = 25V, I = 21A DS D Q Total Gate Charge 13 19 g Q Pre-Vth Gate-to-Source Charge 1.8 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 0.9 nC V = 10V gs2 GS Q Gate-to-Drain Charge 4.3 I = 21A D gd Q Gate Charge Overdrive 6.0 godr Q Switch Charge (Q + Q ) 5.2 sw gs2 gd Q Output Charge 40 nC V = 50V, V = 0V oss DS GS R Gate Resistance 2.1 G t Turn-On Delay Time 2.7 V = 50V, V = 10V d(on) DD GS t Rise Time 3.3 ns I = 21A D r t Turn-Off Delay Time 8.0 R = 1.0 d(off) G t Fall Time 2.5 f C Input Capacitance 733 V = 0V iss GS C Output Capacitance 374 pF V = 50V oss DS = 1.0MHz C Reverse Transfer Capacitance 11 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 35 A MOSFET symbol S D (Body Diode) showing the G integral reverse I Pulsed Source Current 140 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.3 V T = 25C, I = 21A, V =0V SD J S GS t Reverse Recovery Time 30 45 ns T = 25C, I = 21A, V = 50V rr J F DD Q Reverse Recovery Charge 26 39 nC di/dt = 100A/s rr Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 220 mJ AS (Thermally limited) I Avalanche Current 12 A AR Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 3.2 R (Bottom) JC Junction-to-Case 22 C/W R (Top) JC Junction-to-Ambient 35 R JA Junction-to-Ambient 20 R (<10s) JA 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback September 10, 2014