FastIRFET IRFH7885PbF HEXFET Power MOSFET V 80 V DSS R max DS(on) 3.9 m ( V = 10V) GS Q 36 nC g (typical) R 1.2 g (typical) I D 146 A ( T = 25C) C (Bottom) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier BLDC Motor Drive Features Benefits Low R (< 3.9m ) Lower Conduction Losses DS(ON) Low Thermal Resistance to PCB (<0.8C/W) Increased Power Density 100% Rg Tested Increased Reliability Low Profile (<1.05 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1 Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFH7885PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH7885TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 22 D A GS I T = 25C Continuous Drain Current, V 10V 146 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 93 D C(Bottom) GS I Pulsed Drain Current 250 DM P T = 25C Power Dissipation 3.6 W D A P T = 25C Power Dissipation 156 D C(Bottom) Linear Derating Factor 0.03 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 8 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 12 ,2015 IRFH7885PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 80 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 43 mV/C Reference to 25C, I = 1mA BV /T D DSS J R Static Drain-to-Source On-Resistance 3.1 3.9 m V = 10V, I = 50A DS(on) GS D V Gate Threshold Voltage 2.0 3.6 V GS(th) V = V , I = 150A DS GS D Gate Threshold Voltage Coefficient -5.8 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 64V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 111 S V = 25V, I = 50A DS D Q Total Gate Charge 36 54 g Q Pre-Vth Gate-to-Source Charge 7.1 V = 40V gs1 DS Q Post-Vth Gate-to-Source Charge 2.6 nC V = 10V GS gs2 Q Gate-to-Drain Charge 12 I = 50A gd D Q Gate Charge Overdrive 14.3 godr Q Switch Charge (Q + Q) 14.6 sw gs2 gd Q Output Charge 101 nC V = 40V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 5.4 V = 40V, V = 10V d(on) DD GS t Rise Time 6.2 ns I = 50A D r t Turn-Off Delay Time 13 R = 1.0 d(off) G t Fall Time 4.6 f C Input Capacitance 2311 V = 0V iss GS C Output Capacitance 1373 pF V = 40V oss DS = 1.0MHz C Reverse Transfer Capacitance 28 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D 146 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 250 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.3 V T = 25C, I = 50A, V =0V SD J S GS t Reverse Recovery Time 45 68 ns T = 25C, I = 50A, V = 40V rr J F DD Q Reverse Recovery Charge 58 87 nC di/dt = 100A/s rr Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 202 mJ AS I Avalanche Current 50 A AR Thermal Resistance Parameter Typ. Max. Units R (Bottom) Junction-to-Case 0.8 JC C/W R (Top) Junction-to-Case 19 JC R Junction-to-Ambient 35 JA Junction-to-Ambient 23 R (<10s) JA 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 12 ,2015