HEXFET Power MOSFET Q1 Q2 V 30 30 V DS R DS(on) max 8.6 3.0 m ( V = 10V) GS Q 8.3 34 nC g (typical) I D 13 28 A ( T = 25C) A Dual PQFN 5X6 mm Applications Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low charge control MOSFET (8.3 nC typical) Lower switching losses Lower conduction losses Low R synchronous MOSFET (< 3.0 m) results in DSon 100% Rg tested Increased reliability Low Profile ( 0.9 mm) Increased power density Easier manufacturing Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL2, Consumer Qualification Increased reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH7911TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7911TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 13 28 D A GS I T = 70C Continuous Drain Current, V 10V 10 23 A D A GS Pulsed Drain Current I 100 230 DM P T = 25C Power Dissipation 2.4 3.4 W D A P T = 70C Power Dissipation 1.5 2.2 D A Linear Derating Factor 0.019 0.027 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Case R 7.7 2.5 C/W JC Junction-to-Ambient R 53 37 JA % & ( Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V DSS GS D V /T Breakdown Voltage Temp. Coefficient Q1 0.021 V/C Reference to 25C, I = 1mA D DSS J Q2 0.022 V = 10V, I = 12A Q1 7.2 8.6 GS D R V = 4.5V, I = 10A Static Drain-to-Source On-Resistance 11.1 14.5 m GS D DS(on) V = 10V, I = 26A Q2 2.4 3.0 GS D 3.4 4.0 V = 4.5V, I = 21A GS D V Q1: V = V , I = 25 A Gate Threshold Voltage Q1&Q2 1.35 2.35 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient Q1 -6.8 mV/C Q2: V = V , I = 100A DS GS D GS(th) J Q2 -6.4 V = 24V, V = 0V I Drain-to-Source Leakage Current Q1&Q2 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C Q1&Q2 150 DS GS J V = 20V I Gate-to-Source Forward Leakage Q1&Q2 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage Q1&Q2 -100 GS V = 15V, I = 10A gfs Forward Transconductance Q1 17 S DS D V = 15V, I = 21A Q2 106 DS D Q Total Gate Charge Q1 8.3 12 g Q2 34 51 Q Pre-Vth Gate-to-Source Charge Q1 2.0 Q1 gs1 Q2 7.9 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 1.0 nC V = 4.5V, I = 10A gs2 GS D Q2 3.6 Q Gate-to-Drain Charge Q1 3.2 Q2 gd Q2 11 V = 15V DS Q Gate Charge Overdrive Q1 2.1 V = 4.5V, I = 21A godr GS D Q2 12 Q Switch Charge (Q + Q ) Q1 4.2 sw gs2 gd Q2 15 V = 16V, V = 0V Q Output Charge Q1 5.0 nC DS GS oss Q2 19 R Gate Resistance Q1 1.8 G Q2 0.7 t Turn-On Delay Time Q1 12 Q1 d(on) Q2 22 V = 15V, V = 4.5V DD GS t Rise Time Q1 15 I = 10A r D Q2 35 ns R =1.8 G t Turn-Off Delay Time Q1 12 Q2 d(off) V = 15V, V = 4.5V Q2 28 DD GS Fall Time Q1 5.9 I = 21A t f D R =1.8 Q2 14 G C Input Capacitance Q1 1060 iss V = 0V Q2 4450 GS C Output Capacitance Q1 230 pF V = 15V DS oss Q2 850 = 1.0MHz C Reverse Transfer Capacitance Q1 110 rss Q2 440 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 12 32 mJ AS I Avalanche Current 10 21 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 3.0 A MOSFET symbol S (Body Diode) Q2 3.0 showing the I Pulsed Source Current Q1 100 A integral reverse SM (Body Diode) Q2 230 p-n junction diode. T = 25C, I = 10A, V = 0V V Diode Forward Voltage Q1 1.0 V SD J S GS Q2 1.0 T = 25C, I = 21A, V = 0V J S GS Q1 T = 25C, I = 10A, t Reverse Recovery Time Q1 13 20 ns rr J F Q2 20 29 V = 15V, di/dt = 300A/s DD Q2 T = 25C, I = 21A, Q Reverse Recovery Charge Q1 13 20 nC rr J F V = 15V, di/dt = 280A/s Q2 24 36 DD % & (