HEXFET Power MOSFET Applications Control MOSFET of Sync-Buck Converters V R max Qg DSS DS(on) used for Notebook Processor Power 8.7m V = 10V 30V 8.3nC Control MOSFET for Isolated DC-DC GS Converters in Networking Systems Benefits Very low R at 4.5V V DS(ON) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free (Qualified up to 260C Reflow) PQFN 5X6 mm RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 15 A GS D I T = 70C Continuous Drain Current, V 10V GS 12 D A I T = 25C Continuous Drain Current, V 10V C GS 35 A D Pulsed Drain Current I 110 DM Power Dissipation P T = 25C 3.1 W D A Power Dissipation P T = 70C 2.0 D A Linear Derating Factor 0.025 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 7.2 C/W JC Junction-to-Ambient R 40 JA Notes through are on page 9 IRFH7914PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 7.5 8.7 V = 10V, I = 14A DS(on) GS D m 11.2 13 V = 4.5V, I = 11A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 25A DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.08 mV/C I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 77 S V = 15V, I = 11A DS D Q g Total Gate Charge 8.3 12 Q Pre-Vth Gate-to-Source Charge 2.1 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 2.8 I = 11A gd D Q godr Gate Charge Overdrive 2.4 See Fig.17 & 18 Q Switch Charge (Q + Q ) sw gs2 gd 3.8 Q oss Output Charge 4.8 nC V = 16V, V = 0V DS GS R Gate Resistance 1.3 2.2 G t Turn-On Delay Time 11 V = 15V, V = 4.5V d(on) DD GS t Rise Time 11 I = 11A r D ns t Turn-Off Delay Time 12 R =1.8 d(off) G t f Fall Time 4.6 See Fig.15 C iss Input Capacitance 1160 V = 0V GS C oss Output Capacitance 220 pF V = 15V DS C Reverse Transfer Capacitance 100 rss = 1.0MHz Avalanche Characteristics Parameter Units Typ. Max. Single Pulse Avalanche Energy E AS 17 mJ Avalanche Current I AR 11 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 3.9 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 110 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 11A, V = 0V J S GS t Reverse Recovery Time 14 21 ns = 25C, I = 11A, V = 15V rr T J F DD Q di/dt = 200A/s Reverse Recovery Charge 9.5 14 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on