StrongIRFET IRFH8201PbF V 25 V DSS R max DS(on) 0.95 ( V = 10V) GS m ( V = 4.5V) 1.60 GS Qg 56 nC (typical) I D 324 A ( T = 25C) C (Bottom) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters Features Benefits Low R (<0.95m) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<0.8C/W) Enable better thermal dissipation Low Profile (<0.9 mm) Increased Power Density results in Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques E as ier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFH8201PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH8201TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 49 D A GS I T = 25C Continuous Drain Current, V 10V 324 D C (Bottom) GS A I T = 100C Continuous Drain Current, V 10V 205 D C (Bottom) GS I Pulsed Drain Current 1296 DM P T = 25C 3.6 Power Dissipation D A W P T = 25C Power Dissipation 156 D C (Bottom) 0.029 W/C Linear Derating Factor T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 Rev. 2.4, 2020-12-14 IRFH8201PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient Reference to 25C, I = 1mA 20 mV/C BV /T D DSS J V = 10V, I = 50A 0.80 0.95 GS D R Static Drain-to-Source On-Resistance DS(on) m 1.20 1.60 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V GS(th) V = V , I = 150A DS GS D Gate Threshold Voltage Coefficient V -6.1 mV/C GS(th) V = 20V, V = 0V 1.0 DS GS I Drain-to-Source Leakage Current A DSS 150 V = 20V, V = 0V, T =125C DS GS J Gate-to-Source Forward Leakage V = 20V 100 GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 181 S V = 10V, I = 50A DS D Q Total Gate Charge V = 10V, V = 13V, I = 50A g 111 nC GS DS D Q Total Gate Charge g 56 84 Q Pre-Vth Gate-to-Source Charge V = 13V 16 DS gs1 Q Post-Vth Gate-to-Source Charge V = 4.5V 7.0 nC GS gs2 Q Gate-to-Drain Charge I = 50A gd 18 D Q Gate Charge Overdrive 15 godr Q Switch Charge (Q + Q ) sw gs2 gd 25 Q Output Charge V = 16V, V = 0V oss 39 nC DS GS R Gate Resistance G 1.1 t Turn-On Delay Time V = 13V, V = 4.5V d(on) 27 DD GS t Rise Time 54 ns I = 50A r D t Turn-Off Delay Time 31 d(off) R =4.7 G t Fall Time 22 f C Input Capacitance 7330 V = 0V iss GS V = 13V C Output Capacitance 1730 pF oss DS = 1.0MHz C Reverse Transfer Capacitance 850 rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy mJ AS 7 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 156 (Body Diode) showing the G A integral reverse I Pulsed Source Current SM 1296 S (Body Diode) p-n junction diode. V Diode Forward Voltage V T = 25C, I = 50A, V = 0V SD 1.0 J S GS t Reverse Recovery Time ns T = 25C, I = 50A, V = 13V rr J F DD 25 38 Q Reverse Recovery Charge nC di/dt = 400A/s rr 57 86 Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 0.5 0.8 JC Junction-to-Case C/W R (Top) 21 JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 20 JA 2 Rev. 2.4, 2020-12-14