Strong IRFET IRFH8202TRPbF V 25 V DSS R max DS(on) 1.05 m ( V = 10V) GS Qg 52 nC (typical) Rg 1.3 (typical) I D 314 A PQFN 5X6 mm ( T = 25C) C (Bottom) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (<1.05 m) Lower Conduction Losses L Low Thermal Resistance to PCB (< 0.8C/W) Enable better Thermal Dissipation Low Profile (< 0.9mm) Increased Power Density Industry-Standard Pinout results in Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques E as ier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable Part Number Package Type Note Form Quantity IRFH8202TRPbF PQFN 5mm x 6mm Tape and Reel 4000 Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-to-Source Voltage DS 25 V V Gate-to-Source Voltage GS 20 V I T = 25C Continuous Drain Current, V 10V D A GS 47 I T = 70C Continuous Drain Current, V 10V D A GS 38 I T = 25C Continuous Drain Current, V 10V D C(Bottom) GS 314 A I T = 100C Continuous Drain Current, V 10V D C(Bottom) GS 199 I Pulsed Drain Current DM 1256 P T = 25C Power Dissipation D A 3.6 W P T = 25C Power Dissipation D C(Bottom) 156 Linear Derating Factor 0.029 W/C T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Notes through are on page 9 1 Rev. 2.4, 2021-01-29 IRFH8202TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1.0mA BV /T D DSS J R Static Drain-to-Source On-Resistance 0.90 1.05 V = 10V, I = 50A DS(on) GS D m 1.40 1.85 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V GS(th) V = V , I = 150A DS GS D Gate Threshold Voltage Coefficient -6.3 mV/C V GS(th) I Drain-to-Source Leakage Current 5.0 V = 20V, V = 0V DSS DS GS A 150 V = 20V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 181 S V = 13V, I = 50A DS D Q Total Gate Charge 110 nC V = 10V, V = 13V, I = 50A g GS DS D Q Total Gate Charge 52 78 g V = 13V Q Pre-Vth Gate-to-Source Charge 13 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 7.8 gs2 GS nC Q Gate-to-Drain Charge 17 I = 50A D gd Q Gate Charge Overdrive 15 godr Q Switch Charge (Q + Q ) 25 sw gs2 gd Q Output Charge 36 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.3 2.6 G t Turn-On Delay Time 28 V = 13V, V = 4.5V d(on) DD GS t Rise Time 46 I = 50A D r ns t Turn-Off Delay Time 30 d(off) R =1.8 G t Fall Time 19 f C Input Capacitance 7174 V = 0V iss GS C Output Capacitance 1758 V = 13V oss pF DS C Reverse Transfer Capacitance 828 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 468 mJ AS I Avalanche Current 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 156 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1256 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 37 56 ns T = 25C, I = 50A, V = 13V rr J F DD Q Reverse Recovery Charge 68 102 nC di/dt = 200A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 0.5 0.8 JC Junction-to-Case R (Top) 15 JC C/W Junction-to-Ambient 35 R JA Junction-to-Ambient R (<10s) 21 JA 2 Rev. 2.4, 2021-01-29