Strong IRFET IRFH8307TRPbF V 30 V DSS R max DS(on) 1.3 m ( V = 10V) GS Qg 50 nC (typical) Rg 1.3 (typical) I D 275 A ( T = 25C) C (Bottom) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters Features Benefits Low R (<1.3m ) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<0.8C/W) Enable better thermal dissipation Low Profile (<0.9 mm) Increased Power Density results in Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques E as ier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH8307PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH8307TRPbF Absolute Maximum Ratings Symbol Parameter Max. Units V Gate-to-Source Voltage GS 20 V I T = 25C Continuous Drain Current, V 10V D A GS 42 I T = 70C Continuous Drain Current, V 10V D A GS 33 I T = 25C Continuous Drain Current, V 10V D C (Bottom) GS 275 A I T = 100C Continuous Drain Current, V 10V D C (Bottom) GS 174 I Pulsed Drain Current DM 1100 P T = 25C Power Dissipation D A 3.6 W P T = 25C Power Dissipation D C (Bottom) 156 Linear Derating Factor 0.029 W/C T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Notes through are on page 9 1 Rev. 2.6, 2021-03-17 IRFH8307TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient Reference to 25C, I = 1mA 0.02 V/C BV / T D DSS J R Static Drain-to-Source On-Resistance 1.1 1.3 V = 10V, I = 50A DS(on) GS D m 1.7 2.1 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 150A GS(th) DS GS D Gate Threshold Voltage Coefficient -6.2 mV/C V GS(th) I Drain-to-Source Leakage Current V = 24V, V = 0V 5.0 DSS DS GS A V = 24V, V = 0V, T =125C 150 DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 190 S V = 15V, I = 50A DS D Q Total Gate Charge V = 10V, V = 15V, I = 50A g 120 nC GS DS D Q Total Gate Charge g 50 75 Q Pre-Vth Gate-to-Source Charge V = 15V gs1 12 DS Q Post-Vth Gate-to-Source Charge 6.5 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 16 I = 50A gd D Q Gate Charge Overdrive 16 See Fig. 18 godr Q Switch Charge (Q + Q ) 23 sw gs2 gd Q Output Charge 30 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.3 2.6 G t Turn-On Delay Time V = 15V, V = 4.5V d(on) 26 DD GS t Rise Time 30 ns I = 50A r D t Turn-Off Delay Time 31 d(off) R =1.8 G See Fig.17 t Fall Time 13 f C Input Capacitance 7200 V = 0V iss GS V = 15V C Output Capacitance 1360 pF oss DS C Reverse Transfer Capacitance = 1.0MHz 590 rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 420 mJ AS I Avalanche Current A AR 50 Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D 156 (Body Diode) showing the A G integral reverse I Pulsed Source Current SM 1100 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time T = 25C, I = 50A, V = 15V 34 51 ns rr J F DD Q Reverse Recovery Charge di/dt = 200A/s 68 100 nC rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 0.5 0.8 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 33 JA 2 Rev. 2.6, 2021-03-17