V 30 V DS V 20 V gs max R DS(on) max 2.95 ( V = 10V) GS m ( V = 4.5V) 4.30 GS Q 30.0 nC g typ I D 50 A ( T = 25C) c(Bottom) Features Benefits Low Thermal Resistance to PCB (< 1.7C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH8316TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8316TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 27 A GS D Continuous Drain Current, V 10V I T = 70C 21 D A GS I T = 25C Continuous Drain Current, V 10V 120 GS D C(Bottom) A I T = 100C Continuous Drain Current, V 10V 78 GS D C(Bottom) I T = 25C Continuous Drain Current, V 10V (Package Limited) 50 GS D C Pulsed Drain Current I 490 DM Power Dissipation P T = 25C 3.6 A D W Power Dissipation P T = 25C 59 C(Bottom) D Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG % & Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 30 V DSS GS D V /T Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1.0mA DSS J D V = 10V, I = 20A R Static Drain-to-Source On-Resistance 2.40 2.95 DS(on) GS D m 3.40 4.30 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.2 1.7 2.2 V GS(th) V = V , I = 50 A DS GS D V Gate Threshold Voltage Coefficient -6.4 mV/C GS(th) V = 24V, V = 0V I Drain-to-Source Leakage Current 1 DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GS GSS nA Gate-to-Source Reverse Leakage -100 V = -20V GS V = 10V, I = 20A gfs Forward Transconductance 69 S DS D Q Total Gate Charge 59 nC V = 10V, V = 15V, I = 20A GS DS D g Q Total Gate Charge 30.0 45.0 g Q Pre-Vth Gate-to-Source Charge 7.0 V = 15V gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 2.7 gs2 GS nC Q Gate-to-Drain Charge 9.7 I = 20A D gd Q Gate Charge Overdrive 10.6 godr Q Switch Charge (Q + Q ) 12.4 sw gs2 gd V = 16V, V = 0V Q Output Charge 18 nC oss DS GS R Gate Resistance 1.1 G 1.7 t Turn-On Delay Time 19 V = 15V, V = 4.5V d(on) DD GS t Rise Time 67 I = 20A r D ns R =1.8 t Turn-Off Delay Time 20 d(off) G t Fall Time 24 f C Input Capacitance 3610 V = 0V iss GS pF C Output Capacitance 740 V = 10V oss DS C Reverse Transfer Capacitance 390 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 160 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 50 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 490 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 14 21 ns T = 25C, I = 20A, V = 15V rr DD J F Q Reverse Recovery Charge 18 27 nC di/dt = 380A/ s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.7 JC Junction-to-Case R (Top) 32 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA % &