IRFH8318PbF HEXFET Power MOSFET V 30 V DS V 20 V gs max R DS(on) max 3.1 ( V = 10V) m GS ( V = 4.5V) GS 4.6 Q 19 nC g typ PQFN 5X6 mm I D 50 A ( T = 25C) c(Bottom) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 1.7C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH8318TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8318TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 27 D A Continuous Drain Current, V 10V I T = 70C GS 21 D A I T = 25C Continuous Drain Current, V 10V 120 C(Bottom) GS D A I T = 100C Continuous Drain Current, V 10V 76 C(Bottom) GS D I T = 25C Continuous Drain Current, V 10V (Package Limited) 50 C GS D Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 59 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 www.irf.com 1 03/30/12 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS V /T Breakdown Voltage Temp. Coefficient 0.019 V/C Reference to 25C, I = 1.0mA DSS J D V = 10V, I = 20A R Static Drain-to-Source On-Resistance 2.5 3.1 DS(on) GS D m 3.6 4.6 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 50 A DS GS D V Gate Threshold Voltage Coefficient -6.0 mV/C GS(th) V = 24V, V = 0V I Drain-to-Source Leakage Current 1 DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS V = 10V, I = 20A gfs Forward Transconductance 81 S DS D Q Total Gate Charge 41 nC V = 10V, V = 15V, I = 20A GS DS D g Q Total Gate Charge 19 g Q Pre-Vth Gate-to-Source Charge 5.8 V = 15V gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 2.3 gs2 GS nC Q Gate-to-Drain Charge 4.4 I = 20A D gd Q Gate Charge Overdrive 6.5 godr Q Switch Charge (Q + Q ) 6.7 sw gs2 gd V = 16V, V = 0V Q Output Charge 18 nC oss DS GS R Gate Resistance 1.7 G t Turn-On Delay Time 15 V = 15V, V = 4.5V d(on) DD GS t Rise Time 33 I = 20A r D ns R =1.8 t Turn-Off Delay Time 18 d(off) G t Fall Time 12 f C Input Capacitance 3180 V = 0V iss GS pF C Output Capacitance 700 V = 10V oss DS 270 C Reverse Transfer Capacitance = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 160 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 50 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 20A, V = 15V rr DD J F Reverse Recovery Charge 35 53 nC Q di/dt = 380A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.7 JC Junction-to-Case R (Top) 32 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA 2 www.irf.com