FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET Q1 Q2 V 25 25 V DSS R max DS(on) 4.10 1.35 m ( V = 4.5V) GS Qg 13 35 nC (typical) I D 60 60 A ( T = 25C) C Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 6X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low thermal resistance path to the PCB Increased power density Low thermal resistance path to the top Increased power density Low charge control MOSFET (13nC typical) results in Lower switching losses Lower conduction losses Low R synchronous MOSFET (<1.35m ) DSON Intrinsic schottky diode with low forward voltage on Q2 Lower switching losses RoHS compliant, halogen-free Environmentally friendlier MSL2, industrial qualification Increased reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFHE4250DPbF Dual PQFN 6mm x 6mm Tape and Reel 4000 IRFHE4250DTRPbF Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Gate-to-Source Voltage 16 V GS I T = 25C Continuous Drain Current, V 10V 86 303 A D C GS I T = 70C Continuous Drain Current, V 10V 69 243 D C GS I T = 25C Continuous Drain Current D C 60 60 (Source Bonding Technology Limited) I Pulsed Drain Current 180 525 DM P T = 25C Power Dissipation 156 156 W D C P T = 70C Power Dissipation 100 100 D C Linear Derating Factor 1.3 1.3 W/C T Operating Junction and C J -55 to + 150 T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units R (Bottom) Junction-to-Case 3.7 0.91 JC Junction-to-Case 0.91 C/W R (Top) 2.1 JC Junction-to-Ambient 24 R 24 JA Junction-to-Ambient 17 R (<10s) 17 JA Notes through are on page 12 1 www.irf.com 2013 International Rectifier September 26, 2013 IRFHE4250DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage Q1 25 V V = 0V, I = 250A DSS GS D Q2 25 V = 0V, I = 1.0mA GS D BV / T Breakdown Voltage Temp. Coefficient Q1 23 mV/C Reference to 25C, I = 1.0mA D DSS J = 10mA Q2 21 Reference to 25C, I D Q1 2.20 2.75 V = 10V, I = 27A GS D R Static Drain-to-Source On-Resistance Q2 0.70 0.90 V = 10V, I = 27A m DS(on) GS D Q1 3.20 4.10 V = 4.5V, I = 27A GS D Q2 1.00 1.35 V = 4.5V, I = 27A GS D V Gate Threshold Voltage Q1 1.1 1.6 2.1 V Q1: V = V , I = 35A GS(th) DS GS D Q2 1.1 1.6 2.1 Q2: V = V , I = 100A DS GS D Gate Threshold Voltage Coefficient Q1 -5.8 mV/C Q1: V = V , I = 35A V / T GS(th) J DS GS D Q2 -7.8 Q2: V = V , I = 1.0mA DS GS D I Drain-to-Source Leakage Current Q1 1.0 A V = 20V, V = 0V DSS DS GS Q2 500 V = 20V, V = 0V DS GS I Gate-to-Source Forward Leakage Q1/Q2 100 nA V = 16V GSS GS Gate-to-Source Reverse Leakage Q1/Q2 -100 V = -16V GS gfs Forward Transconductance Q1 73 S V = 10V, I = 14A DS D Q2 121 V = 10V, I = 23A DS D Q Total Gate Charge Q1 13 20 g Q2 35 53 Q Pre-Vth Gate-to-Source Charge Q1 3.6 Q1 gs1 V = 13V Q2 8.6 DS V = 4.5V, I = 13A Q Post-Vth Gate-to-Source Charge Q1 1.3 gs2 GS D nC Q2 3.8 Q2 Q Gate-to-Drain Charge Q1 5.2 gd V = 13V Q2 13 DS V = 4.5V, I = 23A Q Gate Charge Overdrive Q1 2.9 godr GS D Q2 9.6 Q Switch Charge (Q + Q) Q1 6.5 sw gs2 gd Q2 16.8 Q Output Charge Q1 14 nC V = 16V, V = 0V oss DS GS Q2 41 R Gate Resistance Q1 0.5 G Q2 0.4 t Turn-On Delay Time Q1 11 Q1 d(on) Q2 17 V = 13V V = 4.5V DS GS t Rise Time Q1 33 r I = 14A, Rg = 1.8 D Q2 54 ns t Turn-Off Delay Time Q1 14 Q2 d(off) Q2 24 V = 13V V = 4.5V DS GS t Fall Time Q1 12 I = 23A, Rg = 1.8 f D Q2 16 C Input Capacitance Q1 1735 iss Q2 4765 V = 0V GS C Output Capacitance Q1 493 pF V = 13V oss DS Q2 1577 = 1.0MHz C Reverse Transfer Capacitance Q1 137 rss Q2 370 2 www.irf.com 2013 International Rectifier September 26, 2013