FastIRFET IRFHM4226TRPbF HEXFET Power MOSFET V 25 V DSS R max DS(on) 2.2 ( V = 10V) GS m ( V = 4.5V) 3.3 GS Qg 16 nC (typical) I D 60 A ( T = 25C) C (Bottom) PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Benefits Low R (<2.2m) Lower Conduction Losses DSon Low Charge (typical 16nC) Low Switching Losses Low Thermal Resistance to PCB (<3.2C/W) Enable better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1 Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFHM4226TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM4226TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 28 D A GS I T = 25C Continuous Drain Current, V 10V 105 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 67 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V D C GS 60 (Source Bonding Technology Limited) I Pulsed Drain Current 420 DM P T = 25C Power Dissipation 2.7 D A W P T = 25C Power Dissipation 39 D C(Bottom) Linear Derating Factor 0.021 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback June 3, 2014 IRFHM4226TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1mA BV /T D DSS J R Static Drain-to-Source On-Resistance 1.7 2.2 V = 10V, I = 30A DS(on) GS D m 2.6 3.3 V = 4.5V, I = 30A GS D V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 50A GS(th) DS GS D Gate Threshold Voltage Coefficient -5.7 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 136 S V = 10V, I = 30A DS D Q Total Gate Charge 32 nC V = 10V, V = 13V, I = 30A g GS DS D Q Total Gate Charge 16 24 g Q Pre-Vth Gate-to-Source Charge 3.6 V = 13V DS gs1 nC V = 4.5V Q Post-Vth Gate-to-Source Charge 2.0 gs2 GS Q Gate-to-Drain Charge 5.8 I = 30A gd D Q Gate Charge Overdrive 4.6 godr Q Switch Charge (Q + Q) 7.8 sw gs2 gd Q Output Charge 15 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.1 G t Turn-On Delay Time 11 V = 13V, V = 4.5V d(on) DD GS t Rise Time 35 ns I = 30A r D t Turn-Off Delay Time 14 R =1.8 d(off) G t Fall Time 8.1 f C Input Capacitance 2000 V = 0V iss GS C Output Capacitance 570 pF V = 13V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 124 mJ AS I Avalanche Current 30 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 60 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 420 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 30A, V = 13V rr J F DD Q Reverse Recovery Charge 28 42 nC di/dt = 450A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 3.2 R (Bottom) JC Junction-to-Case 35 C/W R (Top) JC Junction-to-Ambient 47 R JA Junction-to-Ambient 30 R (<10s) JA 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback June 3, 2014