FastIRFET IRFHM4231TRPbF HEXFET Power MOSFET V 25 V DSS R max DS(on) 3.4 ( V = 10V) GS m ( V = 4.5V) 4.6 GS Qg 9.7 nC (typical) I D 40 A ( T = 25C) C (Bottom) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low R (<3.4m) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<4.3C/W) Enable better Thermal Dissipation Low Profile (<0.9mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM4231PbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM4231TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 22 D A GS I T = 25C Continuous Drain Current, V 10V 72 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 46 D C(Bottom) GS A Continuous Drain Current, V 10V GS I T = 25C 40 D C (Source Bonding Technology Limited) I Pulsed Drain Current 288 DM P T = 25C Power Dissipation 2.7 W D A P T = 25C Power Dissipation 29 D C(Bottom) Linear Derating Factor 0.021 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 2016-2-26 IRFHM4231TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 22 mV/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 2.7 3.4 V = 10V, I = 30A DS(on) GS D m 3.7 4.6 V = 4.5V, I = 30A GS D V Gate Threshold Voltage 1.1 1.6 2.1 V GS(th) V = V , I = 35A DS GS D Gate Threshold Voltage Coefficient -5.4 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 A V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 120 S V = 10V, I = 30A DS D Q Total Gate Charge 20 nC V = 10V, V = 13V, I = 30A g GS DS D Q Total Gate Charge 9.7 15 g Q Pre-Vth Gate-to-Source Charge 1.9 V = 13V gs1 DS Q Post-Vth Gate-to-Source Charge 1.2 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.6 I = 30A gd D Q Gate Charge Overdrive 3.0 godr Q Switch Charge (Q + Q) 4.8 sw gs2 gd Q Output Charge 9.6 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.4 G t Turn-On Delay Time 8.7 V = 13V, V = 4.5V d(on) DD GS t Rise Time 28 ns I = 30A r D t Turn-Off Delay Time 12 R =1.8 d(off) G t Fall Time 5.9 f C Input Capacitance 1270 V = 0V iss GS C Output Capacitance 360 pF V = 13V DS oss = 1.0MHz C Reverse Transfer Capacitance 97 rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 42 mJ AS I Avalanche Current 30 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 40 (Body Diode) showing the A G integral reverse I Pulsed Source Current SM 288 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 30A, V = 13V rr J F DD Q Reverse Recovery Charge 13 20 nC di/dt = 280A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 4.3 R (Bottom) JC C/W R (Top) Junction-to-Case 37 JC R Junction-to-Ambient 47 JA R (<10s) Junction-to-Ambient 31 JA 2 2016-2-26