IRFHM8228PbF HEXFET Power MOSFET V 25 V DSS V max 20 V GS R max DS(on) 5.2 G ( V = 10V) GS m S S S ( V = 4.5V) 8.7 GS D Qg 9.0 nC (typical) D D D I D D 25 A ( T = 25C) C (Bottom) PQFN 3.3X3.3 mm Applications Control or synchronous MOSFET for synchronous buck converter Features Benefits Low Thermal Resistance to PCB (<3.7C/W) Enable better thermal dissipation Low Profile (<1.05 mm) Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility results in Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8228PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8228TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 19 D A GS I T = 70C Continuous Drain Current, V 10V 15 D A GS I T = 25C Continuous Drain Current, V 10V 65 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 41 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V D C GS 25 (Source Bonding Technology Limited) I Pulsed Drain Current 260 DM P T = 25C Power Dissipation 2.8 D A W P T = 25C Power Dissipation 34 D C(Bottom) Linear Derating Factor 0.023 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 10 1 2016-2-23 IRFHM8228PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 18 mV/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 4.2 5.2 V = 10V, I = 20A DS(on) GS D m 6.7 8.7 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25A DS GS D Gate Threshold Voltage Coefficient -6.6 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 V = 20V, V = 0V DSS DS GS A 150 V = 20V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 63 S V = 10V, I = 20A DS D Q Total Gate Charge 18 nC V = 10V, V = 13V, I = 20A g GS DS D Q Total Gate Charge 9.0 14 g V = 13V Q Pre-Vth Gate-to-Source Charge 2.7 gs1 DS nC V = 4.5V Q Post-Vth Gate-to-Source Charge 1.0 gs2 GS Q Gate-to-Drain Charge 3.1 I = 20A D gd Q Gate Charge Overdrive 2.2 godr Q Switch Charge (Q + Q) 4.1 sw gs2 gd Q Output Charge 9.7 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.7 G t Turn-On Delay Time 11 V = 13V, V = 4.5V d(on) DD GS t Rise Time 22 ns I = 20A r D t Turn-Off Delay Time 13 R =1.8 d(off) G t Fall Time 6.2 f C Input Capacitance 1667 V = 0V iss GS C Output Capacitance 456 pF V = 10V oss DS C Reverse Transfer Capacitance 195 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 50 mJ AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 25 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 260 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 14 21 ns T = 25C, I = 20A, V = 13V rr J F DD Q Reverse Recovery Charge 10 15 nC di/dt = 260A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 3.7 R (Bottom) JC Junction-to-Case 41 C/W R (Top) JC Junction-to-Ambient 44 R JA Junction-to-Ambient 29 R (<10s) JA 2 2016-2-23