IRFHM8235PbF HEXFET Power MOSFET V 25 V DSS V max 20 V GS R max DS(on) 7.7 G ( V = 10V) GS m S S S ( V = 4.5V) 13.4 GS D Qg 7.7 nC D (typical) D D I D D 25 A ( T = 25C) C (Bottom) PQFN 3.3X3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Thermal Resistance to PCB (<4.1C/W) Enable better Thermal Dissipation Low Profile (<1.05mm) Increased Power Density Industry-Standard Pin out Multi-Vendor Compatibility results in Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8235PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8235TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 16 D A GS I T = 70C Continuous Drain Current, V 10V 13 D A GS I T = 25C Continuous Drain Current, V 10V 50 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 32 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V D C GS 25 (Source Bonding Technology Limited) I Pulsed Drain Current 240 DM P T = 25C Power Dissipation 3.0 D A W P T = 25C Power Dissipation 30 D C(Bottom) Linear Derating Factor 0.024 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 10 1 2016-2-23 IRFHM8235PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 19 mV/C Reference to 25C, I = 1.0mA BV / T D DSS J R Static Drain-to-Source On-Resistance 6.2 7.7 V = 10V, I = 20A DS(on) GS D m 10.3 13.4 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25A DS GS D Gate Threshold Voltage Coefficient -5.9 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 V = 20V, V = 0V DSS DS GS A 150 V = 20V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 43 S V = 10V, I = 20A DS D Q Total Gate Charge 16 nC V = 10V, V = 13V, I = 20A g GS DS D Q Total Gate Charge 7.7 12 g V = 13V Q Pre-Vth Gate-to-Source Charge 1.9 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 1.3 gs2 GS nC Q Gate-to-Drain Charge 2.7 I = 20A D gd Q Gate Charge Overdrive 1.5 godr Q Switch Charge (Q + Q) 4.0 sw gs2 gd Q Output Charge 6.4 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.6 G t Turn-On Delay Time 7.9 V = 13V, V = 4.5V d(on) DD GS t Rise Time 16 I = 20A r D ns t Turn-Off Delay Time 7.5 R =1.8 d(off) G t Fall Time 5.2 f C Input Capacitance 1040 V = 0V iss GS C Output Capacitance 300 pF V = 10V oss DS C Reverse Transfer Capacitance 120 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 41 mJ AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 25 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 240 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 10 15 ns T = 25C, I = 20A, V = 13V rr J F DD Q Reverse Recovery Charge 4.9 7.4 nC di/dt = 300A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 4.1 R (Bottom) JC Junction-to-Case 42 R (Top) JC C/W Junction-to-Ambient 42 R JA R (<10s) Junction-to-Ambient 28 JA 2 2016-2-23