IRFHM830DPbF HEXFET Power MOSFET V 30 V DSS R max DS(on) 4.3 m ( V = 10V) GS Qg 13 nC (typical) Rg 1.1 (typical) I D 40 A ( T = 25C) C (Bottom) PQFN 3.3 x 3.3 mm Applications Synchronous MOSFET for Buck Converters Features Benefits Low R (< 4.3m ) Lower Conduction Losses DSon Schottky intrinsic diode with low forward voltage Low Switching Losses Low Thermal Resistance to PCB (<3.4C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (< 1.0 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFHM830DTRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM830DTR2PBF PQFN 3.3mm x 3.3mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 20 D A GS I T = 70C Continuous Drain Current, V 10V 16 D A GS I T = 25C Continuous Drain Current, V 10V 40 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 40 D C(Bottom) GS I Pulsed Drain Current 160 DM P T = 25C Power Dissipation 2.7 D A W T = 25C Power Dissipation 37 P D C(Bottom) Linear Derating Factor 0.022 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback September 25, 2015 IRFHM830DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 1mA DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 4mA BV / T D DSS J R Static Drain-to-Source On-Resistance 3.4 4.3 V = 10V, I = 20A DS(on) GS D m 5.7 7.1 V = 4.5V, I = 20A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 50A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.0 mV/C V = V , I = 1mA DS GS D GS(th) I Drain-to-Source Leakage Current 500 A V = 24V, V = 0V DSS DS GS 5.0 mA V = 24V,V = 0V,T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 69 S V = 15V, I = 20A DS D Q Total Gate Charge 27 V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 13 20 g Q Pre-Vth Gate-to-Source Charge 2.9 V = 15V DS gs1 V = 4.5V Q Post-Vth Gate-to-Source Charge 1.8 nC gs2 GS Q Gate-to-Drain Charge 4.5 I = 20A gd D Q Gate Charge Overdrive 3.8 See Fig.17 & 18 godr Q Switch Charge (Q + Q) 6.3 sw gs2 gd Q Output Charge 10 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.1 G t Turn-On Delay Time 9.8 V = 15V, V = 4.5V d(on) DD GS t Rise Time 20 I = 20A r D ns t Turn-Off Delay Time 9.1 R = 1.8 d(off) G t Fall Time 6.7 See Fig.15 f C Input Capacitance 1797 V = 0V iss GS C Output Capacitance 363 pF V = 25V oss DS C Reverse Transfer Capacitance 148 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 82 mJ AS (Thermally limited) I Avalanche Current 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 40 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 160 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.85 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 20A, V = 15V rr J F DD Q Reverse Recovery Charge 17 26 nC di/dt = 300A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 3.4 R (Bottom) JC Junction-to-Case 37 R (Top) JC C/W Junction-to-Ambient 46 R JA Junction-to-Ambient 31 R (<10s) JA 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback September 25, 2015