IRMOSFET IRFHM830PbF V 30 V DSS R max DS(on) 3.8 m ( V = 10V) GS Qg 15 nC (typical) Rg 2.5 (typical) I D 77 A ( T = 25C) C (Bottom) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low R (< 3.8m ) Lower Conduction Losses DSon Low Thermal Resistance to PCB (< 3.4C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile (< 1.0 mm) Increased Power Density results in Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFHM830TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 PQFN 3.3mm x 3.3mm Tape and Reel 400 IRFHM830TR2PBF EOL notice 259 Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-to-Source Voltage DS 30 V V Gate-to-Source Voltage GS 20 I T = 25C Continuous Drain Current, V 10V D A GS 21 I T = 70C Continuous Drain Current, V 10V D A GS 17 I T = 25C Continuous Drain Current, V 10V D C(Bottom) GS 77 A I T = 100C Continuous Drain Current, V 10V D C(Bottom) GS 49 I Pulsed Drain Current DM 308 P T = 25C Power Dissipation D A 2.7 W P T = 25C Power Dissipation D C(Bottom) 37 W/C Linear Derating Factor 0.022 T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Notes through are on page 9 1 Rev. 2.4, 2021-03-17 IRFHM830PbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 3.0 3.8 V = 10V, I = 20A DS(on) GS D m 4.8 6.0 V = 4.5V, I = 20A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 50A DS GS D Gate Threshold Voltage Coefficient -6.3 mV/C V GS(th) I Drain-to-Source Leakage Current 1 V = 24V, V = 0V DSS DS GS A 150 V = 24V,V = 0V,T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 52 S V = 15V, I = 20A DS D Q Total Gate Charge 31 V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 15 23 g V = 15V Q Pre-Vth Gate-to-Source Charge 3.8 gs1 DS Q Post-Vth Gate-to-Source Charge 2.0 V = 4.5V gs2 nC GS Q Gate-to-Drain Charge 5.0 I = 20A D gd Q Gate Charge Overdrive 4.2 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 7.0 sw gs2 gd Q Output Charge 9.7 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.5 G t Turn-On Delay Time 12 V = 15V, V = 4.5V d(on) DD GS t Rise Time 25 I = 20A r D ns t Turn-Off Delay Time 13 d(off) R = 1.8 G t Fall Time 9.2 See Fig.15 f C Input Capacitance 2155 V = 0V iss GS C Output Capacitance 350 V = 25V pF oss DS C Reverse Transfer Capacitance 160 = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 82 mJ AS (Thermally limited) I Avalanche Current 20 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 37 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 308 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 17 26 ns T = 25C, I = 20A, V = 15V rr J F DD Q Reverse Recovery Charge 23 35 nC di/dt = 300A/s rr Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.4 R (Bottom) JC 37 Junction-to-Case R (Top) JC C/W 46 Junction-to-Ambient R JA 31 Junction-to-Ambient R (<10s) JA 2 Rev. 2.4, 2021-03-17