IRFHM8337TRPbF HEXFET Power MOSFET V 30 V DSS R max DS(on) 12.4 ( V = 10V) GS m ( V = 4.5V) 17.9 GS Qg 5.4 nC (typical) I D PQFN 3.3 x 3.3 mm 18 A ( T = 25C) C Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (< 5.0C/W) Enable better Thermal Dissipation Low Profile (<1.05 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1,Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8337PbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM8337TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 12 D A GS I T = 70C Continuous Drain Current, V 10V 9.4 D A GS I Pulsed Drain Current 94 DM A I T = 25C Continuous Drain Current, V 10V 35 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 22 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V D C GS 18 (Source Bonding Technology Limited) P T = 25C Power Dissipation 2.8 D A W P T = 25C Power Dissipation 25 D C(Bottom) Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 8 1 2016-2-23 IRFHM8337TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 9.4 12.4 V = 10V, I = 12A DS(on) GS D m 14.5 17.9 V = 4.5V, I =9.4A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25A DS GS D V Gate Threshold Voltage Coefficient -6.2 mV/C GS(th) 1.0 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 24V, V = 0V,T = 125C DS GS J Gate-to-Source Forward Leakage 100 A V = 20V GS I GSS Gate-to-Source Reverse Leakage -100 V =-20 V GS gfs Forward Transconductance 17 S V = 15V, I = 9.4A DS D Q Total Gate Charge 5.4 8.1 g Q Pre-Vth Gate-to-Source Charge 1.1 V = 15V DS gs1 nC V = 4.5V Q Post-Vth Gate-to-Source Charge 0.7 gs2 GS Q Gate-to-Drain Charge 2.2 I = 9.4A gd D Q Gate Charge Overdrive 1.5 godr Q Switch Charge (Q + Q) 2.9 sw gs2 gd Q Output Charge 3.8 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.0 G t Turn-On Delay Time 9.0 V = 15V, V = 4.5V d(on) DD GS t Rise Time 11 ns I = 9.4A r D t Turn-Off Delay Time 9.9 R = 1.3 d(off) G t Fall Time 5.6 f C Input Capacitance 755 V = 0V iss GS C Output Capacitance 171 pF V = 15V oss DS C Reverse Transfer Capacitance 83 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 13 mJ AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 18 MOSFET symbol S D (Body Diode) showing the A G integral reverse I Pulsed Source Current 94 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 9.4A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 9.4A, V = 15V rr J F DD Q Reverse Recovery Charge 27 41 nC di/dt = 200A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 5.0 R (Bottom) JC Junction-to-Case 50 C/W R (Top) JC Junction-to-Ambient 45 R JA Junction-to-Ambient 31 R (<10s) JA 2 2016-2-23