IRFHM8342TRPbF HEXFET Power MOSFET V 30 V DSS R max DS(on) 16 ( V = 10V) GS m ( V = 4.5V) 25 GS Qg 5.0 nC (typical) I D 20 A ( T = 25C) C (Bottom) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (<6.2C/W) Enable better Thermal Dissipation Low Profile (<0.9 mm) Increased Power Density results in Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8342PbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM8342TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 10 D A GS I T = 25C Continuous Drain Current, V 10V 28 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 18 D C(Bottom) GS A Continuous Drain Current, V 10V GS I T = 25C 20 D C (Source Bonding Technology Limited) I Pulsed Drain Current 112 DM P T = 25C Power Dissipation 2.6 D A W P T = 25C Power Dissipation 20 D C(Bottom) Linear Derating Factor 0.020 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 10 1 2016-2-23 IRFHM8342TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D BV / T Breakdown Voltage Temp. Coefficient 20 mV/C Reference to 25C, I = 1mA D DSS J R Static Drain-to-Source On-Resistance 13 16 V = 10V, I = 17A DS(on) GS D m 20 25 V = 4.5V, I = 14A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 25A GS(th) DS GS D V Gate Threshold Voltage Coefficient -5.2 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 19 S V = 10V, I = 17A DS D Q Total Gate Charge 10 nC V = 10V, V = 15V, I = 17A g GS DS D Q Total Gate Charge 5.0 7.5 V = 15V g DS Q Pre-Vth Gate-to-Source Charge 1.8 nC V = 4.5V gs GS Q Gate-to-Drain Charge 1.7 I = 17A D gd Q Gate Charge Overdrive 1.5 godr Q Output Charge 3.3 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.6 G t Turn-On Delay Time 8.1 V = 15V, V = 4.5V d(on) DD GS t Rise Time 30 ns I = 17A D r t Turn-Off Delay Time 7.6 R =1.8 d(off) G t Fall Time 5.6 f C Input Capacitance 560 V = 0V iss GS pF V = 25V C Output Capacitance 102 oss DS C Reverse Transfer Capacitance 48 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 21 mJ AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 20 (Body Diode) showing the G A integral reverse I Pulsed Source Current SM S 112 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 9.4 14 ns T = 25C, I = 17A, V = 15V rr J F DD Q Reverse Recovery Charge 5.8 8.7 nC di/dt = 330A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 6.2 R (Bottom) JC Junction-to-Case 50 C/W R (Top) JC Junction-to-Ambient 49 R JA Junction-to-Ambient 34 R (<10s) JA 2 2016-2-23