IRFHM9391TRPbF HEXFET Power MOSFET V -30 V DSS D 5 4 G R max DS(on) 14.6 ( V = -10V) GS D 6 3 S m ( V = -4.5V) 22.5 GS D 7 2 S Qg 32 nC (typical) 8 D 1 S I D PQFN 3.3 x 3.3 mm -11 A ( T = 25C) A Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (<3.8C/W) Enable better Thermal Dissipation Low Profile (<1.05 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1,Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM9391PbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM9391TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 25 V GS I T = 25C Continuous Drain Current, V 10V -11 D A GS I T = 70C Continuous Drain Current, V 10V -9.0 D A GS I Pulsed Drain Current -90 DM A I T = 25C Continuous Drain Current, V 10V -38 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V -24 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V D C GS -24 (Source Bonding Technology Limited) P T = 25C Power Dissipation 2.6 D A W P T = 25C Power Dissipation 33 D C(Bottom) Linear Derating Factor 0.021 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 2016-2-23 IRFHM9391TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = -1mA BV / T D DSS J 10 V = -20V, I = -11A GS D R Static Drain-to-Source On-Resistance 11.7 14.6 V = -10V, I = -11A m GS D DS(on) 18 22.5 V = -4.5V, I = -11A GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25A DS GS D Gate Threshold Voltage Coefficient -5.1 mV/C V GS(th) -1.0 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -150 V = -24V, V = 0V,T = 125C DS GS J Gate-to-Source Forward Leakage -10 V = -25V GS I A GSS Gate-to-Source Reverse Leakage 10 V = 25V GS gfs Forward Transconductance 16 S V = -10V, I = -9.0A DS D Q Total Gate Charge 16 nC V = -4.5V, V =-15V, I = -9.0A g GS DS D Q Total Gate Charge 32 48 g Q Pre-Vth Gate-to-Source Charge 3.0 V = -15V gs1 DS nC V = -10V Q Post-Vth Gate-to-Source Charge 1.4 gs2 GS Q Gate-to-Drain Charge 8.0 I = -9.0A gd D Q Gate Charge Overdrive 19.6 godr Q Switch Charge (Q + Q) 9.4 sw gs2 gd Q Output Charge 9.0 nC V = -16V, V = 0V oss DS GS R Gate Resistance 16 G t Turn-On Delay Time 11 V = -15V, V = -4.5V d(on) DD GS t Rise Time 27 ns I = -1.0A r D t Turn-Off Delay Time 72 R = 6.8 d(off) G t Fall Time 60 f C Input Capacitance 1543 V = 0V iss GS C Output Capacitance 310 pF V = -25V DS oss C Reverse Transfer Capacitance 208 = 1.0KHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 75 mJ AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.8 (Body Diode) showing the A G integral reverse I Pulsed Source Current SM -90 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -2.8A, V = 0V SD J S GS t Reverse Recovery Time 64 96 ns T = 25C, I = -2.8A, V = -24V rr J F DD Q Reverse Recovery Charge 25 38 nC di/dt = 100A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 3.8 R (Bottom) JC Junction-to-Case 42 C/W R (Top) JC Junction-to-Ambient 47 R JA Junction-to-Ambient 32 R (<10s) JA 2 2016-2-23