IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS V 100V DSS Sink to Lead Creepage Dist. = 4.8mm R 0.036 DS(on) Fully Avalanche Rated Lead-Free I 24A D Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast S switching speed and ruggedized device design that HEXFET D G Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety TO-220 Full-Pak of applications The TO-220 Fullpak eliminates the need for additional insulating G D S hardware in commercial-industrial applications. The moulding Gate Drain Source compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI1310NPbF TO-220 Full-Pak Tube 50 IRFI1310NPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 24 D C GS I T = 100C Continuous Drain Current, V 10V 17 A D C GS I Pulsed Drain Current 140 DM P T = 25C Maximum Power Dissipation 56 W D C Linear Derating Factor W/C 0.37 V Gate-to-Source Voltage V 20 GS E Single Pulse Avalanche Energy (Thermally Limited) 420 AS mJ I Avalanche Current 22 A AR E Repetitive Avalanche Energy 5.6 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 2.7 R JC C/W Junction-to-Ambient 65 R JA 1 2017-04-27 IRFI1310NPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.036 V = 10V, I = 13A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 14 S V = 25V, I = 22A DS D 25 V = 100 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 120 I = 22A g D Q Gate-to-Source Charge 15 nC V = 80V gs DS Q Gate-to-Drain Charge 58 V = 10V , See Fig. 6 and 13 gd GS t Turn-On Delay Time 11 V = 50V d(on) DD t Rise Time 56 I =22A r D ns t Turn-Off Delay Time 45 R = 3.6 d(off) G t Fall Time 40 R = 2.9 See Fig. 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1900 V = 0V iss GS C Output Capacitance 450 V = 25V oss DS pF C Reverse Transfer Capacitance 230 = 1.0MHz, See Fig. 5 rss C Drain to Sink Capacitance 12 = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 24 S (Body Diode) showing the A Pulsed Source Current integral reverse I 140 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 13A,V = 0V SD J S GS t Reverse Recovery Time 180 270 ns T = 25C ,I = 22A rr J F Q Reverse Recovery Charge 1.2 1.8 C di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) starting T = 25C, L = 1.0mH, R = 25 , I = 22A (See fig. 12) J G AS I 22A, di/dt 180A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. t=60s, =60Hz Uses IRF1310N data and test conditions. 2 2017-04-27