IRFI3306GPbF HEXFET Power MOSFET Applications V 60V High Efficiency Synchronous Rectification in SMPS DSS Uninterruptible Power Supply R typ. 3.3m DS(on) High Speed Power Switching max. 4.2m Hard Switched and High Frequency Circuits I 71A D Benefits D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche G SOA S D Enhanced body diode dV/dt and dI/dt Capability G S Lead-Free TO-220 Full-Pak Halogen-Free G D S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI3306GPbF TO-220 Full-Pak Tube 50 IRFI3306GPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 71 A D C GS I T = 100C Continuous Drain Current, V 10V 50 D C GS I Pulsed Drain Current 300 DM P T = 25C Maximum Power Dissipation 46 W D C Linear Derating Factor 0.31 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 311 mJ AS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lb in (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.23 R JC C/W Junction-to-Ambient (PCB Mount) 65 R JA 1 2017-04-27 IRFI3306GPbF Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.068 V/C Reference to 25C, I = 5.0mA V / T D (BR)DSS J 3.3 4.2 V = 10V, I = 43A R Static Drain-to-Source On-Resistance m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D I 20 A V = 60V, V = 0V DS GS DSS Drain-to-Source Leakage Current 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.72 G(int) Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 89 S V = 25V, I = 43A DS D Q Total Gate Charge 90 135 I = 43A g D Q Gate-to-Source Charge 22 nC V = 30V gs DS Q Gate-to-Drain Mille) Charge 26 V = 10V GS gd Q Total Gate Charge Sync. (Q - Q) 116 I = 43A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 V = 39V d(on) DD t Rise Time 30 I = 43A ns r D t Turn-Off Delay Time 45 R = 2.7 d(off) G V = 10V t Fall Time 33 f GS C Input Capacitance 4685 V = 0V iss GS C Output Capacitance 506 V = 50V oss DS C Reverse Transfer Capacitance 310 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 733 V = 0V, V = 0V to 48V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 822 V = 0V, V = 0V to 48V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current 71 A MOSFET symbol I S (Body Diode) showing the Pulsed Source Current 300 A integral reverse I SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 43A, V = 0V SD J S GS dv/dt Peak Diode Recovery 2.3 V/ns 43 T = 25C J V = 51V t Reverse Recovery Time ns R rr 47 T = 125C J I = 43A F 63 T = 25C J Q Reverse Recovery Charge nC di/dt = 100A/s rr 78 T = 125C J I Reverse Recovery Current 2.5 A T = 25C RRM J Notes: Repetitive rating pulse width limited by max. junction Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax, starting T = 25C, L = 0.34mH Coss eff. (ER) is a fixed capacitance that gives the same energy as J R = 50 , I = 43A, V =10V. Part not recommended for use Coss while VDS is rising from 0 to 80% VDSS. G AS GS above this value. Pulse width 400s duty cycle 2%. R is measured at T approximately 90C. J 2 2017-04-27