IRFI4024H-117P
Key Parameters
Features
V
55 V
DS
Integrated half-bridge package
m
R typ. @ 10V
48
DS(ON)
Reduces the part count by half
Q typ.
8.9 nC
g
Facilitates better PCB layout
Q typ.
4.3 nC
sw
Key parameters optimized for Class-D
R typ.
2.3
G(int)
audio amplifier applications
T max 150 C
J
Low R for improved efficiency
DS(ON)
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 100W per channel into
6 load in full-bridge configuration
amplifier
Lead-free package
TO-220 Full-Pak 5 PIN
G1, G2 D1, D2 S1, S2
Gate Drain Source
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
V
Drain-to-Source Voltage 55 V
DS
V Gate-to-Source Voltage 20
GS
I @ T = 25C Continuous Drain Current, V @ 10V
11 A
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 6.9
D C GS
Pulsed Drain Current
I
44
DM
P @T = 25C Power Dissipation 14 W
D C
P @T = 100C
Power Dissipation 5.4
D C
Linear Derating Factor 0.11 W/C
Single Pulse Avalanche Energy
E
7.4 mJ
AS
T
Operating Junction and -55 to +150 C
J
T Storage Temperature Range
STG
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)
Thermal Resistance
Parameter Typ. Max. Units
Junction-to-Case
R 9.21 C/W
JC
R
Junction-to-Ambient (free air) 65
JA
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08/24/06
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
BV
Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A
DSS
GS D
V /T
Breakdown Voltage Temp. Coefficient 54 mV/C Reference to 25C, I = 1mA
DSS J D
m
R Static Drain-to-Source On-Resistance 48 60 V = 10V, I = 7.7A
DS(on)
GS D
V
Gate Threshold Voltage 2.0 4.0 V V = V , I = 25A
GS(th) DS GS D
V /T Gate Threshold Voltage Coefficient -9.17 mV/C
GS(th) J
I
Drain-to-Source Leakage Current 20 A V = 55V, V = 0V
DSS
DS GS
250 V = 55V, V = 0V, T = 125C
DS GS J
I
Gate-to-Source Forward Leakage 200 nA V = 20V
GSS
GS
Gate-to-Source Reverse Leakage -200 V = -20V
GS
g Forward Transconductance 6.5 S V = 25V, I = 7.7A
fs
DS D
Q
Total Gate Charge 8.9 13
g
Q Pre-Vth Gate-to-Source Charge 1.6 V = 44V
gs1
DS
Q
Post-Vth Gate-to-Source Charge 0.77 nC V = 10V
gs2 GS
Q Gate-to-Drain Charge 3.5 I = 7.7A
gd
D
Q
Gate Charge Overdrive 3.0 See Fig. 6 and 15
godr
Q Switch Charge (Q + Q )
4.3
sw gs2 gd
R
Internal Gate Resistance 2.3
G(int)
t
Turn-On Delay Time 5.9 V = 28V, V = 10V
d(on) DD GS
t Rise Time 2.0 I = 7.7A
r
D
t
Turn-Off Delay Time 13 ns R = 2.5
d(off) G
t Fall Time 3.4
f
C
Input Capacitance 320 V = 0V
iss GS
C Output Capacitance 47 pF V = 50V
oss
DS
C
Reverse Transfer Capacitance 31 = 1.0MHz, See Fig. 5
rss
L Internal Drain Inductance 4.5 Between lead,
D D
nH 6mm (0.25in.)
G
L
Internal Source Inductance 7.5 from package
S
S
and center of die contact
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I @ T = 25C
Continuous Source Current 11 MOSFET symbol
S C
(Body Diode) A showing the
G
I
Pulsed Source Current 44 integral reverse
SM
S
(Body Diode) p-n junction diode.
V
Diode Forward Voltage 1.3 V T = 25C, I = 7.7A, V = 0V
SD
J S GS
t
Reverse Recovery Time 17 26 ns T = 25C, I = 7.7A
rr J F
di/dt = 100A/s
Q Reverse Recovery Charge 11 17 nC
rr
Repetitive rating; pulse width limited by max. junction temperature.
Starting T = 25C, L = 0.25mH, R = 25, I = 7.7A.
J G AS
Pulse width 400s; duty cycle 2%.
R is measured at
Specifications refer to single MosFET.
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