StrongIRFET IRFI7440GPbF HEXFET Power MOSFET Application Brushed Motor drive applications D V 40V BLDC Motor drive applications DSS Battery powered circuits R typ. 2.0m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 2.5m Resonant mode power supplies S OR-ing and redundant power switches I 95A D DC/DC and AC/DC converters DC/AC Inverters Benefits S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D G Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant TO-220AB Full-Pak G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFI7440GPbF TO-220 Full-Pak Tube 50 IRFI7440GPbF 6 100 I = 57A D 5 80 4 60 T = 125C J 3 40 2 20 T = 25C J 1 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 2015-12-16 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFI7440GPbF Absolute Maximium Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 95 D C GS I T = 100C Continuous Drain Current, V 10V 67 A D C GS I Pulsed Drain Current 380 DM P T = 25C Maximum Power Dissipation 42 W D C Linear Derating Factor 0.28 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 201 AS (Thermally limited) mJ E 407 Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current A AR See Fig. 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 3.6 JC C/W R Junction-to-Ambient 65 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 37 mV/C Reference to 25C, I = 2mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 2.0 2.5 m V = 10V, I = 57A DS(on) GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.3 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 124H, R = 50, I = 57A, V =10V. Jmax J G AS GS I 57A, di/dt 962A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 29A, V =10V. Jmax J G AS GS 2 2015-12-16