PD - 95480B IRFP2907ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V = 75V 175C Operating Temperature DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 4.5m DS(on) G Lead-Free I = 90A S Description D This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 170 A D C GS I T = 100C 120 C Continuous Drain Current, V 10V (See Fig. 9) D GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 90 D C GS I 680 DM Pulsed Drain Current P T = 25C 310 W C Maximum Power Dissipation D Linear Derating Factor 2.0 W/C V 20 V GS Gate-to-Source Voltage E 520 mJ AS Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS 690 Single Pulse Avalanche Energy Tested Value I AR See Fig.12a,12b,15,16 A Avalanche Current E mJ AR Repetitive Avalanche Energy T -55 to + 175 C J Operating Junction and T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC 0.49 C/W Junction-to-Case R 0.24 CS Case-to-Sink, Flat, Greased Surface R JA 40 Junction-to-Ambient HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage75 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.069 V/C Reference to 25C, I = 1mA D R Static Drain-to-Source On-Resistance 3.5 4.5 V = 10V, I = 90A DS(on) m GS D V GS(th) Gate Threshold Voltage2.04.0V V = V , I = 250A DS GS D gfs Forward Transconductance 180 S V = 25V, I = 90A DS D I DSS Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 180270 I = 90A D Q Gate-to-Source Charge 46 nC V = 60V gs DS Q gd Gate-to-Drain Mille) Charge 65 V = 10V GS t Turn-On Delay Time 19 ns V = 38V d(on) DD t r Rise Time 140 I = 90A D t d(off) Turn-Off Delay Time 97 R = 2.5 G t f Fall Time 100 V = 10V GS L Internal Drain Inductance 5.0 nH Between lead, D D 6mm (0.25in.) G L Internal Source Inductance 13 from package S S and center of die contact C iss Input Capacitance 7500 pF V = 0V GS C Output Capacitance 970 V = 25V oss DS C rss Reverse Transfer Capacitance 510 = 1.0MHz, See Fig. 5 C oss Output Capacitance 3640 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 650 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 1020 V = 0V, V = 0V to 60V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 90 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 680 integral reverse G SM S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 90A, V = 0V SD 1.3 V J S GS t T = 25C, I = 90A, V = 38V rr Reverse Recovery Time 4161ns J F DD Q di/dt = 100A/s Reverse Recovery Charge 59 89 nC rr t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same oss max. junction temperature. (See fig. 11). charging time as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax L=0.13mH, R = 25 , I = 90A, V =10V. GS G AS avalanche performance. Part not recommended for use above this value. This value determined from sample failure population. 100% I 90A, di/dt 340A/s, V V , SD DD (BR)DSS tested to this value in production. T 175C. J R is measured at T of approximately 90C. J Pulse width 1.0ms duty cycle 2%. 2 www.irf.com