IRFP4232PBF Infineon



 IRFP4232PbF

 Features Key Parameters
Advanced process technology V min 250 V
Key parameters optimized for PDP Sustain & DS Energy Recovery applications V typ. 300 V DS (Avalanche)
Low E rating to reduce the power PULSE R typ. @ 10V 30 m DS(ON) dissipation in Sustain & ER applications E typ. 310 J PULSE
Low Q for fast response G I max @ T = 100C
High repetitive peak current capability for 117 A RP C reliable operation T max 175 C J
Short fall & rise times for fast switching
175C operating junction temperature for D improved ruggedness
Repetitive avalanche capability for robustness and reliability G TO-247AC S Description
HEXFET Power MOSFET             
MOSFET    !            MOSFET #$%&'
  (    )  *
  *  )MOSFET  +*   *      Absolute Maximum Ratings Max. Parameter Units V Gate-to-Source Voltage 20 V GS V (TRANSIENT) Gate-to-Source Voltage 30 GS I @ T = 25C Continuous Drain Current, V @ 10V 60 A D C GS I @ T = 100C Continuous Drain Current, V @ 10V 42 D C GS I 240 Pulsed Drain Current DM I @ T = 100C 117 Repetitive Peak Current RP C P @T = 25C Power Dissipation 430 W D C P @T = 100C Power Dissipation 210 D C Linear Derating Factor 2.9 W/C T Operating Junction and -40 to + 175 C J T Storage Temperature Range STG 300 Soldering Temperature for 10 seconds 10lb in (1.1N m) Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.35 C/W JC Notes

through  are on page 8 www.irf.com 1 09/14/07
 Electrical Characteristics @ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 250 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 180 mV/C D DSS J R V = 10V, I = 42A Static Drain-to-Source On-Resistance 30 35.7 m GS D DS(on) V = V , I = 250A V Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -15 mV/C GS(th) J V = 200V, V = 0V I Drain-to-Source Leakage Current 5.0 A DS GS DSS V = 200V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS g V = 25V, I = 42A Forward Transconductance 95 S fs DS D V = 125V, I = 42A, V = 10V Q Total Gate Charge 160 240 nC g DD D GS Q Gate-to-Drain Charge 60 gd V = 125V, V = 10V t Turn-On Delay Time 37 DD GS d(on) t I = 42A Rise Time 100 ns r D t Turn-Off Delay Time 64 R = 5.0 d(off) G t See Fig. 22 Fall Time 63 f t V = 200V, V = 15V, R = 4.7 Shoot Through Blocking Time 100 ns st DD GS G L = 220nH, C= 0.4F, V = 15V GS 310 E V = 200V, R = 4.7, T = 25C Energy per Pulse J PULSE DS G J L = 220nH, C= 0.4F, V = 15V GS 950 V = 200V, R = 4.7, T = 100C DS G J V = 0V C Input Capacitance 7290 GS iss C V = 25V Output Capacitance 610 pF oss DS C Reverse Transfer Capacitance 240 = 1.0MHz, See Fig.5 rss C eff. V = 0V, V = 0V to 200V Effective Output Capacitance 420 oss GS DS L Internal Drain Inductance 5.0 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 13 from package S S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 220 mJ AS E Repetitive Avalanche Energy 43 mJ AR V Repetitive Avalanche Voltage 300 V DS(Avalanche) I Avalanche Current 42 A AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I @ T = 25C Continuous Source Current 60 MOSFET symbol S C (Body Diode) A showing the I integral reverse Pulsed Source Current 240 SM (Body Diode) p-n junction diode. V T = 25C, I = 42A, V = 0V Diode Forward Voltage 1.0 V SD J S GS T = 25C, I = 42A, V = 50V t Reverse Recovery Time 240 360 ns J F DD rr Q di/dt = 100A/s Reverse Recovery Charge 1230 1850 nC rr 2 www.irf.com