IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 150V 0.18 14A Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR13N15D IRFU13N15D Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 14 D C GS I T = 100C Continuous Drain Current, V 10V 9.8 A D C GS I Pulsed Drain Current 56 DM P T = 25C Power Dissipation 86 W D C Linear Derating Factor 0.57 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 3.8 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies Telecom 48V input Active Clamp Forward Converter Notes through are on page 10 www.irf.com 1 12/9/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.17 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.18 V = 10V, I = 8.3A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 5.0 S V = 50V, I = 8.3A fs DS D Q Total Gate Charge 19 29 I = 8.3A g D Q Gate-to-Source Charge 5.5 8.2 nC V = 120V gs DS Q Gate-to-Drain Mille) Charge 9.4 14 V = 10V, gd GS t Turn-On Delay Time 8.0 V = 75V d(on) DD t Rise Time 26 I = 8.3A r D ns t Turn-Off Delay Time 12 R = 11 d(off) G t Fall Time 11 V = 10V f GS C Input Capacitance 620 V = 0V iss GS C Output Capacitance 130 V = 25V oss DS C Reverse Transfer Capacitance 38 pF = 1.0MHz rss C Output Capacitance 780 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 62 V = 0V, V = 120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 110 V = 0V, V = 0V to 120V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 8.3 A AR E Repetitive Avalanche Energy 8.6 mJ AR Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.75 JC R Junction-to-Ambient (PCB mount)* 50 C/W JA R Junction-to-Ambient 110 JA Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 14 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 56 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 8.3A, V = 0V SD J S GS t Reverse Recovery Time 110 ns T = 25C, I = 8.3A rr J F Q Reverse RecoveryCharge 520 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com