IRFR220NPbF SMPS MOSFET IRFU220NPbF HEXFET Power MOSFET Applications V R max (m) I DSS DS(on) D High frequency DC-DC converters 200V 600 5.0A Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) I-Pak D-Pak Fully Characterized Avalanche Voltage IRFU220N IRFR22ON and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 5.0 D C GS I T = 100C Continuous Drain Current, V 10V 3.5 A D C GS I Pulsed Drain Current 20 DM P T = 25C Power Dissipation 43 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 7.5 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies Telecom 48V input Forward Converters Notes through are on page 10 www.irf.com 1 12/10/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 600 m V = 10V, I = 2.9A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 2.6 S V = 50V, I = 2.9A fs DS D Q Total Gate Charge 15 23 I = 2.9A g D Q Gate-to-Source Charge 2.4 3.6 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 6.1 9.2 V = 10V, gd GS t Turn-On Delay Time 6.4 V = 100V d(on) DD t Rise Time 11 I = 2.9A r D ns t Turn-Off Delay Time 20 R = 24 d(off) G t Fall Time 12 V = 10V f GS C Input Capacitance 300 V = 0V iss GS C Output Capacitance 53 V = 25V oss DS C Reverse Transfer Capacitance 15 pF = 1.0MHz rss C Output Capacitance 300 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 23 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 46 V = 0V, V = 0V to 160V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 46 mJ AS I Avalanche Current 2.9 A AR E Repetitive Avalanche Energy 4.3 mJ AR Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.5 JC R Junction-to-Ambient (PCB mount)* 50 C/W JA R Junction-to-Ambient 110 JA Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 5.0 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 20 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 2.9A, V = 0V SD J S GS t Reverse Recovery Time 90 140 ns T = 25C, I = 2.9A rr J F Q Reverse RecoveryCharge 320 480 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com