PD - 94740A IRFR3710Z AUTOMOTIVE MOSFET IRFU3710Z HEXFET Power MOSFET Features D Advanced Process Technology V = 100V DSS Ultra Low On-Resistance 175C Operating Temperature R = 18m DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax I = 42A D S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and D-Pak I-Pak a wide variety of other applications. IRFR3710Z IRFU3710Z Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C 56 GS D C I T = 100C Continuous Drain Current, V 10V GS 39 A D C I T = 25C Continuous Drain Current, V 10V (Package Limited) GS 42 D C Pulsed Drain Current I 220 DM P T = 25C Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E AS (Thermally limited) 150 mJ Single Pulse Avalanche Energy Tested Value E (Tested ) 200 AS Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.05 JC Junction-to-Ambient (PCB mount) R 40 C/W JA R JA Junction-to-Ambient 110 HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.088 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 15 18 V = 10V, I = 33A DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 39 S V = 25V, I = 33A DS D I DSS Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 69 100 I = 33A D Q gs Gate-to-Source Charge 15 nC V = 80V DS Q gd Gate-to-Drain Mille) Charge 25 V = 10V GS t d(on) Turn-On Delay Time 14 V = 50V DD t r Rise Time 43 I = 33A D t d(off) Turn-Off Delay Time 53 ns R = 6.8 G t f Fall Time 42 V = 10V GS L D D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 2930 V = 0V GS C Output Capacitance 290 V = 25V oss DS C rss Reverse Transfer Capacitance 180 pF = 1.0MHz C Output Capacitance 1200 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 180 V = 0V, V = 80V, = 1.0MHz GS DS C eff. Effective Output Capacitance 430 V = 0V, V = 0V to 80V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 56 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 220 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 33A, V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C, I = 33A, V = 50V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 41 62 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com