IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET Uninterruptible Power Supply High Speed Power Switching D V 60V DSS Hard Switched and High Frequency Circuits R typ. 12.6m DS(on) G max. 15.8m Benefits I 43A S D Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D D D Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S S D D G G G 2 TO-220AB D Pak TO-262 IRFB3806PbF IRFS3806PbF IRFSL3806PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C 43 D C Continuous Drain Current, VGS 10V I T = 100C Continuous Drain Current, V 10V 31 D C GS A I Pulsed Drain Current 170 DM P T = 25C 71 W D C Maximum Power Dissipation Linear Derating Factor 0.47 W/C V Gate-to-Source Voltage 20 V GS 24 dv/dt Peak Diode Recovery V/ns T C Operating Junction and -55 to + 175 J T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 73 mJ AS (Thermally limited) Avalanche Current I 25 A AR Repetitive Avalanche Energy E 7.1 mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 2.12 JC R Case-to-Sink, Flat Greased Surface, TO-220 0.50 C/W CS R 62 JA Junction-to-Ambient, TO-220 2 R 40 JA Junction-to-Ambient (PCB Mount) , D Pak www.irf.com 1 02/29/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.075 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12.6 15.8 V = 10V, I = 25A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 41 S V = 10V, I = 25A DS D Q Total Gate Charge 22 30 nC I = 25A g D Q Gate-to-Source Charge 5.0 V = 30V gs DS Q Gate-to-Drain Mille) Charge 6.3 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 28.3 I = 25A, V =0V, V = 10V sync g gd D DS GS R Internal Gate Resistance 0.79 G(int) t Turn-On Delay Time 6.3 ns V = 39V d(on) DD t Rise Time 40 I = 25A r D t Turn-Off Delay Time 49 R = 20 d(off) G t Fall Time 47 V = 10V f GS C Input Capacitance 1150 V = 0V iss GS C Output Capacitance 130 V = 50V oss DS C Reverse Transfer Capacitance 67 pF = 1.0MHz rss C eff. (ER) 190 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 230 V = 0V, V = 0V to 60V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol D 43 S (Body Diode) showing the G I Pulsed Source Current 170 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 25A, V = 0V SD J S GS t T = 25C V = 51V, Reverse Recovery Time 22 33 ns rr J R 26 39 T = 125C I = 25A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 17 26 nC rr J T = 125C 24 36 J I Reverse Recovery Current 1.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.23mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25 , I = 25A, V =10V. Part not recommended for GS G AS C while V is rising from 0 to 80% V . oss DS DSS use above this value. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 25A, di/dt 1580A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. R is measured at T approximately 90C. J 2 www.irf.com