IRFS4115-7PPbF HEXFET Power MOSFET Applications D V 150V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R typ. 10.0m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits G max. 11.8m I 105A S D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 105 D C GS I T = 100C Continuous Drain Current, V 10V 74 D C GS A I 420 Pulsed Drain Current DM P T = 25C 380 W Maximum Power Dissipation D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS Peak Diode Recovery 32 dv/dt V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 230 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 C/W JC R Junction-to-Ambient (PCB Mount) 40 JA www.irf.com 1 11/7/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.18 V/C Reference to 25C, I = 3.5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 10. 11.8 m V = 10V, I = 63A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 150V, V = 0V DSS DS GS 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 93 S V = 50V, I = 62A DS D Q Total Gate Charge 73 110 nC I = 63A g D Q Gate-to-Source Charge 28 V = 75V gs DS Q Gate-to-Drain Mille) Charge 28 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 45 I = 63A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 18 ns V = 98V d(on) DD t Rise Time 50 I = 63A r D t Turn-Off Delay Time 37 R = 2.1 d(off) G t Fall Time 23 V = 10V f GS C Input Capacitance 5320 V = 0V iss GS C Output Capacitance 490 V = 50V oss DS C Reverse Transfer Capacitance 110 pF = 1.0MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 450 V = 0V, V = 0V to 120V oss GS DS eff. (TR) C Effective Output Capacitance (Time Related) 520 V = 0V, V = 0V to 120V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 104 A MOSFET symbol S D (Body Diode) showing the I Pulsed Source Current 420 integral reverse SM G (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 63A, V = 0V SD J S GS T = 25C V = 130V, t Reverse Recovery Time 82 ns rr J R 99 T = 125C I = 63A J F di/dt = 100A/ s Q Reverse Recovery Charge 271 nC T = 25C rr J 385 T = 125C J I T = 25C Reverse Recovery Current 6.0 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.115mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 63A, V =10V. Part not recommended for GS G AS C while V is rising from 0 to 80% V . oss DS DSS use above this value. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 63A, di/dt 2510A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. R is measured at T approximately 90C. J JC 2 www.irf.com