IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply D V 100V DSS High Speed Power Switching R typ. Hard Switched and High Frequency Circuits 5.6m DS(on) G max. 7.0m I 130A S Benefits D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S S Lead-Free D D D G G G 2 D Pak TO-220AB TO-262 IRFS4310PbF IRFB4310PbF IRFSL4310PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 130 A D C GS I T = 100C Continuous Drain Current, V 10V 92 D C GS I 550 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V 20 V Gate-to-Source Voltage GS Peak Diode Recovery 14 dV/dt V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 980 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R 40 JA Junction-to-Ambient (PCB Mount) , D Pak www.irf.com 1 01/31/06 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.064 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.6 7.0 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS R Gate Input Resistance 1.4 f = 1MHz, open drain G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 160 S V = 50V, I = 75A DS D Q Total Gate Charge 170 250 nC I = 75A g D Q Gate-to-Source Charge 46 V = 80V gs DS Q Gate-to-Drain Mille) Charge 62 V = 10V gd GS t Turn-On Delay Time 26 ns V = 65V d(on) DD t Rise Time 110 I = 75A r D t Turn-Off Delay Time 68 R = 2.6 d(off) G t Fall Time 78 V = 10V f GS C Input Capacitance 7670 pF V = 0V iss GS C Output Capacitance 540 V = 50V oss DS C Reverse Transfer Capacitance 280 = 1.0MHz rss C eff. (ER) 650 V = 0V, V = 0V to 80V , See Fig.11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 720.1 V = 0V, V = 0V to 80V , See Fig. 5 Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol S 130 D (Body Diode) showing the I Pulsed Source Current 550 integral reverse G SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 45 68 ns T = 25C V = 85V, rr J R T = 125C I = 75A 55 83 J F di/dt = 100A/s Q Reverse Recovery Charge 82 120 nC T = 25C rr J 120 180 T = 125C J I T = 25C Reverse Recovery Current 3.3 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time oss as C while V is rising from 0 to 80% V . temperature. Package limitation current is 75A oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.35mH When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended Jmax J footprint and soldering techniques refer to application note AN-994. R = 25, I = 75A, V =10V. Part not recommended for use GS G AS R is measured at T approximately 90C. above this value. J I 75A, di/dt 550A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. 2 www.irf.com