IRFS4321-7PPbF HEXFET Power MOSFET Application Motion Control Applications D V 150V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R 11.7m DS(on) typ. Hard Switched and High Frequency Circuits G 14.7m max S I 86A D Benefits Low Rdson Reduces Losses Low Gate Charge Improves the Switching Performance Improved Diode Recovery Improves Switching & EMI Performance 30V Gate Voltage Rating Improves Robustness Fully Characterized Avalanche SOA 2 D Pak 7Pin G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity 2 IRFS4321-7PPbF D Pak-7Pin Tube 50 IRFS4321-7PPbF Tape and Reel Left 800 IRFS4321TRL7PP Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 86 D C GS I T = 100C Continuous Drain Current, V 10V 61 A D C GS I Pulsed Drain Current 343 DM P T = 25C Maximum Power Dissipation 350 W D C Linear Derating Factor 2.3 W/C V Gate-to-Source Voltage 30 V GS E Single Pulse Avalanche Energy 120 mJ AS (Thermally limited) T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.43* C/W JC R Junction-to-Ambient 40 JA R (end of life) for D2Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature JC cycles from -55 to 150C and is accounted for by the physical wear out of the die attach medium. Notes through are on page 2 1 www.irf.com 2013 International Rectifier June 14, 2013 IRFS4321-7PPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 150 mV/C Reference to 25C, I = 1mA V /T (BR)DSS J D R Static Drain-to-Source On-Resistance 11.7 14.7 m V = 10V, I = 34A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D 20 A V =150 V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 1.0 mA V =150V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.8 G(int) Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J gfs Forward Transconductance 130 S V = 25V, I =50A DS D Q Total Gate Charge 71 110 I = 50A g D Q Gate-to-Source Charge 24 nC V = 75V gs DS Q Gate-to-Drain (Miller) Charge 21 V = 10V gd GS t Turn-On Delay Time 18 V = 98V d(on) DD t Rise Time 60 I = 50A r D ns t Turn-Off Delay Time 25 R = 2.5 d(off) G t Fall Time 35 V = 10V f GS C Input Capacitance 4460 V = 0V iss GS C Output Capacitance 390 pF V = 50V oss DS C Reverse Transfer Capacitance 82 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D Continuous Source Current MOSFET symbol I 86 S (Body Diode) showing the A G Pulsed Source Current integral reverse I 343 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 50A,V = 0V SD J S GS t Reverse Recovery Time 89 130 ns I = 50A, rr F Q Reverse Recovery Charge 300 450 nC V = 128V rr DD I Reverse Recovery Current 6.5 A di/dt = 100A/s RRM Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.096mH, R = 25, I = 50A, V =10V. Part not recommended for use above this value. jmax J G AS GS Pulse width 400s duty cycle 2%. Ris measured at T approximately 90C J 2 www.irf.com 2013 International Rectifier June 14, 2013