PD - 97002A Applications HEXFET Power MOSFET High frequency DC-DC converters Key Parameters Plasma Display Panel V 150 V DS V min. 200 V DS (Avalanche) Benefits R max 10V m 32 DS(ON) Low Gate-to-Drain Charge to T max Reduce Switching Losses 175 C J Fully Characterized Capacitance Including Effective C to Simplify OSS Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free 2 TO-220AB D Pak TO-262 IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 51* D C GS I T = 100C Continuous Drain Current, V 10V 36* A D C GS I Pulsed Drain Current 240 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 230* D C Linear Derating Factor 1.5* W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 5.5 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.47* JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient 40 JA 2 * R (end of life) for D Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature JC cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 11 www.irf.com 1 09/22/10IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.16 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 32 m V = 10V, I = 36A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D 25 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 19 S V = 50V, I = 36A fs DS D Q Total Gate Charge 60 89 I = 36A g D Q Gate-to-Source Charge 18 27 nC V = 75V gs DS Q Gate-to-Drain Mille) Charge 28 42 V = 10V, gd GS t Turn-On Delay Time 16 V = 75V d(on) DD t Rise Time 47 I = 36A r D ns t Turn-Off Delay Time 28 R = 2.5 d(off) G t Fall Time 25 V = 10V f GS C Input Capacitance 2770 V = 0V iss GS C Output Capacitance 590 V = 25V oss DS C Reverse Transfer Capacitance 110 pF = 1.0MHz rss C Output Capacitance 3940 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 260 V = 0V, V = 120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 550 V = 0V, V = 0V to 120V oss GS DS Avalanche Characteristics Parameter Min. Typ. Max. Units E Single Pulse Avalanche Energy AS 470 mJ I Avalanche Current AR 36 A E Repetitive Avalanche Energy AR 450 mJ V Repetitive Avalanche Voltage DS (Avalanche) 200 V Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 60 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 240 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.5 V T = 25C, I = 36A, V = 0V SD J S GS t Reverse Recovery Time 140 210 nS T = 25C, I = 36A rr J F Q Reverse RecoveryCharge 780 1170 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com