Applications Brushed Motor drive applications HEXFET Power MOSFET BLDC Motor drive applications Battery powered circuits D V 40V DSS Half-bridge and full-bridge topologies R typ. 2.0m DS(on) Synchronous rectifier applications max. 2.5m Resonant mode power supplies G I 208A OR-ing and redundant power switches D DC/DC and AC/DC converters S I 120A D (Package Limited) DC/AC Inverters D D Benefits Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness S D G Fully Characterized Capacitance and Avalanche G SOA 2 D Pak TO-262 Enhanced body diode dV/dt and dI/dt Capability IRFS7440PbF IRFSL7440PbF Lead-Free RoHS Compliant containing no Lead, no Bromide, GD S and no Halogen Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFS7440PbF D2-Pak Tube 50 IRFS7440PbF IRFS7440PbF D2-Pak Tape and Reel Left 800 IRFS7440TRLPbF IRFSL7440PbF TO-262 Tube 50 IRFSL7440PbF 7.0 240 I = 100A D Limited By Package 6.0 200 5.0 160 T = 125C 4.0 120 J 3.0 80 2.0 40 T = 25C J 1.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units 208 I T = 25C Continuous Drain Current, V 10V D C GS 147 I T = 100C Continuous Drain Current, V 10V D C GS A 120 I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) D C GS 772 I Pulsed Drain Current DM 208 P T = 25C Maximum Power Dissipation W D C Linear Derating Factor 1.4 W/C Gate-to-Source Voltage 20 V V GS Operating Junction and -55 to + 175 T J T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 238 mJ AS (Thermally limited) Single Pulse Avalanche Energy 560 E AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.72 R JC R Case-to-Sink, Flat Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 5.0mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 2.0 2.5 V = 10V, I = 100A DS(on) GS D m 3.0 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 40V, V = 0V DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.6 G Calculated continuous current based on maximum allowable junction Pulse width 400s duty cycle 2%. temperature. Bond wire current limit is 120A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. Limited by T , starting T = 25C, L = 0.048mH Jmax J Limited by T starting T = 25C, L= 1mH, R = 50, I = 34A, V =10V. Jmax J G AS GS R = 50, I = 100A, V =10V. G AS GS I 100A, di/dt 1330A/ s, V V , T 175C. SD DD (BR)DSS J